51
TITLE: Deposition of nanometric double layers Ru/Au, Ru/Pd, and Pd/Au onto CdZnTe by the electroless method  Full Text
AUTHORS: Zheng, Q; Dierre, F; Corregidor, V ; Fernandez Ruiz, R; Crocco, J; Bensalah, H; Alves, E ; Dieguez, E;
PUBLISHED: 2012, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 358, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
52
TITLE: Doped gallium oxide nanowires for photonics
AUTHORS: Nogales, E; Lopez, I; Mendez, B; Piqueras, J; Lorenz, K; Alves, E ; Garcia, JA;
PUBLISHED: 2012, SOURCE: Conference on Oxide-Based Materials and Devices III in OXIDE-BASED MATERIALS AND DEVICES III, VOLUME: 8263
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
53
TITLE: Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering  Full Text
AUTHORS: Borges, J; Martin, N; Barradas, NP ; Alves, E ; Eyidi, D; Beaufort, MF; Riviere, JP; Vaz, F ; Marques, L ;
PUBLISHED: 2012, SOURCE: THIN SOLID FILMS, VOLUME: 520, ISSUE: 21
INDEXED IN: Scopus WOS CrossRef
54
TITLE: Electroless deposition of Au, Pt, or Ru metallic layers on CdZnTe  Full Text
AUTHORS: Zheng, Q; Dierre, F; Corregidor, V; Crocco, J; Bensalah, H; Plaza, JL; Alves, E ; Dieguez, E;
PUBLISHED: 2012, SOURCE: THIN SOLID FILMS, VOLUME: 525
INDEXED IN: Scopus WOS CrossRef
55
TITLE: Electroless plating of Au, Pt, or Ru thin film layer on CdZnTe
AUTHORS: Zheng, Q; Dierre, F; Corregidor, V ; Crocco, J; Bensalah, H; Plaza, JL; Alves, E ; Dieguez, E;
PUBLISHED: 2012, SOURCE: 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 in IEEE Nuclear Science Symposium Conference Record
INDEXED IN: Scopus CrossRef
IN MY: ORCID
56
TITLE: Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studies  Full Text
AUTHORS: Kaminska, A; Ma, CG; Brik, MG; Kozanecki, A; Bockowski, M; Alves, E ; Suchocki, A;
PUBLISHED: 2012, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 24, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
57
TITLE: Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
AUTHORS: Catarino, N; Nogales, E; Franco, N; Darakchieva, V; Miranda, SMC; Mendez, B; Alves, E ; Marques, JG ; Lorenz, K;
PUBLISHED: 2012, SOURCE: EPL, VOLUME: 97, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
58
TITLE: High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry  Full Text
AUTHORS: Magalhaes, S; Barradas, NP ; Alves, E ; Watson, IM; Lorenz, K ;
PUBLISHED: 2012, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273
INDEXED IN: Scopus WOS
59
TITLE: High pressure annealing of Europium implanted GaN
AUTHORS: Lorenz, K ; Miranda, SMC; Alves, E ; Roqan, IS; O'Donnell, KP; Bockowski, M;
PUBLISHED: 2012, SOURCE: Conference on Gallium Nitride Materials and Devices VII in GALLIUM NITRIDE MATERIALS AND DEVICES VII, VOLUME: 8262
INDEXED IN: Scopus WOS CrossRef
60
TITLE: Incorporation of N in TiO2 films grown by DC-reactive magnetron sputtering  Full Text
AUTHORS: Serio, S ; Melo Jorge, MEM ; Nunes, Y ; Barradas, NP ; Alves, E ; Munnik, F;
PUBLISHED: 2012, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273
INDEXED IN: Scopus WOS
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