191
TITLE: Influence of time, light and temperature on the electrical properties of zinc oxide TFTs  Full Text
AUTHORS: Barquinha, P ; Fortunato, E ; Goncalves, A; Pimentel, A ; Marques, A; Pereira, L ; Martins, R ;
PUBLISHED: 2006, SOURCE: Symposium on ZnO and Related Materials held at the 2005 Spring Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 39, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef: 29
192
TITLE: Investigation of a-Si : H 1D MIS position sensitive detectors for application in 3D sensors  Full Text
AUTHORS: Aguas, H ; Pereira, L ; Raniero, L; Costa, D; Fortunato, E ; Martins, R ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
INDEXED IN: Scopus WOS
193
TITLE: Investigation of a-Si:H 1D MIS position sensitive detectors for application in 3D sensors  Full Text
AUTHORS: Águas, H; Pereira, L ; Raniero, L; Costa, D; Fortunato, E ; Martins, R;
PUBLISHED: 2006, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 352, ISSUE: 9-20
INDEXED IN: CrossRef
194
TITLE: Low temperature processed hafnium oxide: Structural and electrical properties  Full Text
AUTHORS: Pereira, L ; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2006, SOURCE: Symposium on Characterization of High-K Dielectric Materials held at the 2006 E-MRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
195
TITLE: Multicomponent wide band gap oxide semiconductors for thin film transistors
AUTHORS: Fortunato, E ; Barquinha, P ; Pereira, L ; Goncalves, G; Martins, R ;
PUBLISHED: 2006, SOURCE: 6th International Meeting on Information Displays/5th International Display Manufacturing Conference (IMID/IDMC 2006) in IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS, VOLUME: 2006
INDEXED IN: Scopus WOS
196
TITLE: Multifunctional thin film zinc oxide semiconductors: Application to electronic devices
AUTHORS: Fortunato, E ; Goncalves, A; Marques, A; Pimentel, A ; Barquinha, P ; Aguas, H ; Pereira, L ; Raniero, L; Goncalves, G; Ferreira, I ; Martins, R ;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 1
INDEXED IN: Scopus WOS CrossRef: 6
197
TITLE: Nanostructure characterization of high k materials by spectroscopic ellipsometry  Full Text
AUTHORS: Pereira, L ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLISHED: 2006, SOURCE: Symposium P of the Spring Meeting of the European-Materials-Research-Society entitled Curent Trends in Optical and X-ray Meterology of Advanced Materials for Nanoscale Devices in APPLIED SURFACE SCIENCE, VOLUME: 253, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
198
TITLE: Nickel-assisted metal-induced crystallization of silicon: Effect of native silicon oxide layer  Full Text
AUTHORS: Pereira, L ; Martins, RMS ; Schell, N; Fortunato, E ; Martins, R ;
PUBLISHED: 2006, SOURCE: Symposium on Thin Film and Nanostructured Materials for Photovoltaics held at the 2005 EMRS Meeting in THIN SOLID FILMS, VOLUME: 511
INDEXED IN: Scopus WOS CrossRef
199
TITLE: Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization
AUTHORS: Pereira, L ; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 1
INDEXED IN: Scopus WOS CrossRef: 1
200
TITLE: Spectroscopic ellipsometry study of nickel induced crystallization of a-Si  Full Text
AUTHORS: Pereira, L ; Aguas, H ; Beckers, M; Martins, RMS ; Fortunato, E ; Martins, R ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
INDEXED IN: Scopus WOS CrossRef
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