231
TITLE: Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz
AUTHORS: Raniero, L; Martins, R ; Aguas, H ; Zang, S; Ferreira, I ; Pereira, L ; Fortunato, E ; Boufendi, L;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS CrossRef: 1
232
TITLE: High field-effect mobility zinc oxide thin film transistors produced at room temperature  Full Text
AUTHORS: Fortunato, E ; Pimentel, A ; Pereira, L ; Goncalves, A; Lavareda, G ; Aguas, H ; Ferreira, I ; Carvalho, CN ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338
INDEXED IN: WOS
233
TITLE: High field-effect mobility zinc oxide thin film transistors produced at room temperature  Full Text
AUTHORS: Fortunato, E ; Pimentel, A ; Pereira, L ; Goncalves, A; Lavareda, G ; Aguas, H ; Ferreira, I ; Carvalho, CN ; Martins, R ;
PUBLISHED: 2004, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 338-340, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus CrossRef
234
TITLE: High quality conductive gallium-doped zinc oxide films deposited at room temperature  Full Text
AUTHORS: Fortunato, E ; Assuncao, V; Goncalves, A; Marques, A; Aguas, H ; Pereira, L ; Ferreira, I ; Vilarinho, P ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on Thin Film and Nano-Structured Materials for Photovoltaics in THIN SOLID FILMS, VOLUME: 451
INDEXED IN: Scopus WOS CrossRef
235
TITLE: In-situ GIXRD characterization of the crystallization of Ni-Ti sputtered thin films
AUTHORS: Martins, RMS ; Silva, RJC ; Fernandes, FMB ; Pereira, L ; Gordo, PR; Maneira, MJP; Schell, N;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS CrossRef: 3
236
TITLE: Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering  Full Text
AUTHORS: Barquinha, P ; Pereira, L ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on New Materials in Future Silicon Technology Held at the E-MAR 2004 Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 7, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
237
TITLE: MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge
AUTHORS: Aguas, H ; Pereira, L ; Raniero, L; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
238
TITLE: New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering  Full Text
AUTHORS: Fortunato, E ; Goncalves, A; Marques, A; Viana, A ; Aguas, H ; Pereira, L ; Ferreira, I ; Vilarinho, P ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on Protective Coatings and Thin Films held at the E-MRS 20th Spring Meeting in SURFACE & COATINGS TECHNOLOGY, VOLUME: 180
INDEXED IN: Scopus WOS CrossRef: 51
239
TITLE: Next generation of thin film transistors based on zinc oxide
AUTHORS: Fortunato, E ; Barquinha, P ; Pimentel, A ; Goncalves, A; Pereira, L ; Marques, A; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting in INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, VOLUME: 811
INDEXED IN: Scopus WOS
240
TITLE: Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application  Full Text
AUTHORS: Pereira, L ; Marques, A; Aguas, H ; Nedev, N; Georgiev, S; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on Functional Metal Oxides - Semiconductor Structures held at the E-MRS 2003 Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 109, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
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