Luis Miguel Nunes Pereira


AuthID: R-000-9RT

Confirmed Publications: 149



101
TITLE: Recent advances in ZnO transparent thin film transistors  Full Text
AUTHORS: Fortunato, E ; Barquinha, P ; Pimentel, A ; Goncalves, A; Marques, A; Pereira, L ; Martins, R ;
PUBLISHED: 2005, SOURCE: 8th International Conference on Polycrystalline Semiconductors in THIN SOLID FILMS, VOLUME: 487, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef: 313
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102
TITLE: Super linear position sensitive detectors using MIS structures  Full Text
AUTHORS: Aguas, H ; Pereira, L ; Costa, D; Fortunato, E ; Martins, R ;
PUBLISHED: 2005, SOURCE: Symposium of the European-Materials-Research-Society on Si-Based Photonics - Towards True Monolithic Integration in OPTICAL MATERIALS, VOLUME: 27, ISSUE: 5
INDEXED IN: Scopus WOS
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103
TITLE: Transport in high mobility amorphous wide band gap indium zinc oxide films  Full Text
AUTHORS: Martins, R ; Barquinha, P ; Pimentel, A ; Pereira, L ; Fortunato, E ;
PUBLISHED: 2005, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 202, ISSUE: 9
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104
TITLE: Zinc oxide thin-film transistors
AUTHORS: Fortunato, E ; Barquinha, P; Pimentel, A ; Goncalves, A; Marques, A; Pereira, L ; Martins, R;
PUBLISHED: 2005, SOURCE: NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications in Zinc Oxide - A Material for Micro- and Optoelectronic Applications, VOLUME: 194
INDEXED IN: WOS
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105
TITLE: Batch processing method to deposit a-Si : H films by PECVD
AUTHORS: Raniero, L; Aguas, H ; Pereira, L ; Fortunato, E ; Ferreira, I ; Martins, R ;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
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106
TITLE: Characterization of silicon carbide thin films prepared by VHF-PECVD technology  Full Text
AUTHORS: Zhang, S; Raniero, L; Fortunato, E ; Pereira, L ; Martins, N; Canhola, P; Ferreira, I ; Nedev, N; Aguas, H ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus WOS CrossRef
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107
TITLE: Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques  Full Text
AUTHORS: Raniero, L; Pereira, L ; Zhang, SB; Ferreira, I ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338
INDEXED IN: WOS
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108
TITLE: Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques  Full Text
AUTHORS: Raniero, L; Pereira, L ; Zhang, S; Ferreira, I ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 338-340, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus CrossRef
109
TITLE: Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes  Full Text
AUTHORS: Aguas, H ; Pereira, L ; Ferreira, I ; Ramos, AR ; Viana, AS ; Andreu, J; Vilarinho, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
110
TITLE: Effect of annealing on gold rectifying contacts in amorphous silicon
AUTHORS: Aguas, H ; Pereira, L ; Ferreira, I ; Ramos, AR ; Viana, AS ; Andreu, J; Vilarinho, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
Page 11 of 15. Total results: 149.

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