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Maria do Rosário Pimenta Correia
AuthID:
R-000-B8B
Publications
Confirmed
To Validate
Document Source:
All
Document Type:
All Document Types
Article (47)
Proceedings Paper (10)
Correction (2)
Editorial Material (1)
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Order:
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Cit. WOS Dsc
IF WOS Dsc
Cit. Scopus Dsc
IF Scopus Dsc
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Results:
10
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50
Confirmed Publications: 60
41
TITLE:
Analysis of strain depth variations in an In(0.19)Ga(0.81)N layer by Raman spectroscopy
Full Text
AUTHORS:
Correia, MR
;
Pereira, S
;
Pereira, E
; Frandon, J; Renucci, MA;
Alves, E
; Sequeira, AD;
Franco, N
;
PUBLISHED:
2002
,
SOURCE:
International Workshop on Nitride Semiconductors (IWN 2002)
in
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS,
ISSUE:
1
INDEXED IN:
Scopus
WOS
CrossRef
:
6
IN MY:
ORCID
|
ResearcherID
42
TITLE:
Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells
Full Text
AUTHORS:
Pereira, S
;
Correia, MR
;
Pereira, E
; O'Donnell, KP;
Alves, E
;
Barradas, NP
; Sequeira, AD;
Franco, N
;
Watson, IM
; Liu, C;
PUBLISHED:
2002
,
SOURCE:
International Workshop on Nitride Semiconductors (IWN 2002)
in
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS,
ISSUE:
1
INDEXED IN:
Scopus
WOS
CrossRef
:
3
IN MY:
ORCID
|
ResearcherID
43
TITLE:
Interpretation of double x-ray diffraction peaks from InGaN layers (vol 79, pg 1432, 2001)
Full Text
AUTHORS:
Pereira, S
;
Correia, MR
;
Pereira, E
; O'Donnell, KP;
Alves, E
; Sequeira, AD;
Franco, N
;
PUBLISHED:
2002
,
SOURCE:
APPLIED PHYSICS LETTERS,
VOLUME:
80,
ISSUE:
2
INDEXED IN:
Scopus
WOS
IN MY:
ResearcherID
44
TITLE:
Preliminary investigations of infrared Er-related photoluminescence in ion-implanted In0.07Ga0.93N
Full Text
AUTHORS:
Correia, MR
;
Pereira, S
;
Cavaco, A
;
Pereira, E
;
Alves, E
;
PUBLISHED:
2002
,
SOURCE:
APPLIED PHYSICS LETTERS,
VOLUME:
80,
ISSUE:
24
INDEXED IN:
Scopus
WOS
CrossRef
:
6
IN MY:
ORCID
|
ResearcherID
45
TITLE:
Splitting of X-ray diffraction and photoluminescence peaks in InGaN/GaN layers
Full Text
AUTHORS:
Pereira, S
;
Correia, MR
;
Pereira, E
; O'Donnell, KP;
Martin, RW
; White, ME;
Alves, E
; Sequeira, AD;
Franco, N
;
PUBLISHED:
2002
,
SOURCE:
Spring Meeting of the European-Materials-Research-Society
in
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
VOLUME:
93,
ISSUE:
1-3
INDEXED IN:
Scopus
WOS
CrossRef
:
12
IN MY:
ORCID
|
ResearcherID
46
TITLE:
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping
Full Text
AUTHORS:
Pereira, S
;
Correia, MR
; Pereira, E; O'Donnell, KP;
Alves, E
; Sequeira, AD;
Franco, N
; Watson, IM; Deatcher, CJ;
PUBLISHED:
2002
,
SOURCE:
APPLIED PHYSICS LETTERS,
VOLUME:
80,
ISSUE:
21
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
47
TITLE:
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (vol 80, pg 3913, 2002)
Full Text
AUTHORS:
Pereira, S
;
Correia, MR
;
Pereira, E
; O'Donnell, KP;
Alves, E
; Sequeira, AD;
Franco, N
;
Watson, IM
;
Deatcher, CJ
;
PUBLISHED:
2002
,
SOURCE:
APPLIED PHYSICS LETTERS,
VOLUME:
81,
ISSUE:
18
INDEXED IN:
Scopus
WOS
CrossRef
:
8
IN MY:
ORCID
|
ResearcherID
48
TITLE:
Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering
Full Text
AUTHORS:
Alves, E
;
Pereira, S
;
Correia, MR
;
Pereira, E
; Sequeira, AD;
Franco, N
;
PUBLISHED:
2002
,
SOURCE:
15th International Conference on Ion-Beam Analysis (IBA-15)
in
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,
VOLUME:
190,
ISSUE:
1-4
INDEXED IN:
Scopus
WOS
CrossRef
:
8
IN MY:
ORCID
|
ResearcherID
49
TITLE:
Structural and optical properties of InGaN/GaN layers close to the critical layer thickness
Full Text
AUTHORS:
Pereira, S
;
Correia, MR
;
Pereira, E
; Trager Cowan, C; Sweeney, F; O'Donnell, KP;
Alves, E
;
Franco, N
; Sequeira, AD;
PUBLISHED:
2002
,
SOURCE:
APPLIED PHYSICS LETTERS,
VOLUME:
81,
ISSUE:
7
INDEXED IN:
Scopus
WOS
CrossRef
:
85
IN MY:
ORCID
|
ResearcherID
50
TITLE:
Compositional dependence of the strain-free optical band gap in InxGa1-xN layers
Full Text
AUTHORS:
Pereira, S
;
Correia, MR
;
Monteiro, T
; Pereira, E;
Alves, E
; Sequeira, AD;
Franco, N
;
PUBLISHED:
2001
,
SOURCE:
APPLIED PHYSICS LETTERS,
VOLUME:
78,
ISSUE:
15
INDEXED IN:
Scopus
WOS
CrossRef
Handle
IN MY:
ORCID
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