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TITLE: Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristics  Full Text
AUTHORS: Mencaraglia, D; Amaral, A ; Kleider, JP;
PUBLISHED: 1985, SOURCE: Journal of Applied Physics, VOLUME: 58, ISSUE: 3
INDEXED IN: Scopus CrossRef
IN MY: ORCID
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