ProfileOfResearchers

321

TITLE: Radiation tests on commercial instrumentation amplifiers, analog switches & DAC's
AUTHORS: Agapito, JA; Barradas, NP ; Cardeira, FM; Casas, J; Fernandes, AP; Franco, FJ; Gomes, P; Goncalves, IC; Cachero, AH; Lozano, J; Marques, JG; Paz, A; Prata, MJ; Ramalho, AJG; Ruiz, MAR; Santos, JP; Vieira, A;
PUBLISHED: 2001, SOURCE: 7th Workshop on Electronics for LHC Experiments in PROCEEDINGS OF THE SEVENTH WORKSHOP ON ELECTRONICS FOR LHC EXPERIMENTS, VOLUME: 2001, ISSUE: 5

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322

TITLE: RBS analysis of MBE grown SiGe/(001)Si heterostructures with thin high Ge content SiGe channels for HMOS transistors Full Text
AUTHORS: Barradas, NP ; Sequeira, AD; Franco, N; Myronov, M; Mironov, OA; Phillips, PJ; Parker, EHC;
PUBLISHED: 2001, SOURCE: Workshop on Advanced Materials Produced and Analyzed with Ion Beams in MODERN PHYSICS LETTERS B, VOLUME: 15, ISSUE: 28-29

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323

TITLE: RBS ANALYSIS OF MBE GROWN SiGe/(001)Si HETEROSTRUCTURES WITH THIN HIGH Ge CONTENT SiGe CHANNELS FOR HMOS TRANSISTORS Full Text
AUTHORS: BARRADAS, NP ; SEQUEIRA, AD; FRANCO, N; MYRONOV, M; MIRONOV, OA; PHILLIPS, PJ; PARKER, EHC;
PUBLISHED: 2001, SOURCE: Modern Physics Letters B - Mod. Phys. Lett. B, VOLUME: 15, ISSUE: 28n29

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324

TITLE: Resistance decrease in spin tunnel junctions by control of natural oxidation conditions Full Text
AUTHORS: Zhang, ZG; Freitas, PP ; Ramos, AR ; Barradas, NP ; Soares, JC ;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 79, ISSUE: 14

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325

TITLE: Rutherford backscattering analysis of thin films and superlattices with roughness
AUTHORS: Barradas, NP ;
PUBLISHED: 2001, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 34, ISSUE: 14

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326

TITLE: Rutherford backscattering spectrometry and computer simulation for the in-depth analysis of chemically modified poly(vinylidene fluoride) Full Text
AUTHORS: Ross, GJ; Barradas, NP ; Hill, MP; Jeynes, C; Morrissey, P; Watts, JF;
PUBLISHED: 2001, SOURCE: JOURNAL OF MATERIALS SCIENCE, VOLUME: 36, ISSUE: 19

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327

TITLE: Tunnel junctions with AlN barriers and FeTaN electrodes Full Text
AUTHORS: Wang, JG; Cardoso, S ; Freitas, PP ; Wei, P; Barradas, NP ; Soares, JC ;
PUBLISHED: 2001, SOURCE: 8th Joint MMM/Intermag Conference in JOURNAL OF APPLIED PHYSICS, VOLUME: 89, ISSUE: 11

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328

TITLE: Accurate depth profiling of complex optical coatings Full Text
AUTHORS: Jeynes, C; Barradas, NP ; Rafla Yuan, H; Hichwa, BP; Close, R;
PUBLISHED: 2000, SOURCE: 8th European Conference on Applications of Surface and Interface Analysis in SURFACE AND INTERFACE ANALYSIS, VOLUME: 30, ISSUE: 1

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329

TITLE: Artificial neural network algorithm for analysis of Rutherford backscattering data
AUTHORS: Barradas, NP ; Vieira, A;
PUBLISHED: 2000, SOURCE: PHYSICAL REVIEW E, VOLUME: 62, ISSUE: 4

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330

TITLE: Composition of Ni-Ta-C thick films using simulated annealing analysis of elastic backscattering spectrometry data Full Text
AUTHORS: Jeynes, C; Barradas, NP ; Wilde, JR; Greer, AL;
PUBLISHED: 2000, SOURCE: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 161

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