331
TITLE: Growth and characterisation of amorphous carbon films doped with nitrogen  Full Text
AUTHORS: Barradas, NP ; Khan, RUA; Anguita, JV; Silva, SRP; Kreissig, U; Grotzschel, R; Moller, W;
PUBLISHED: 2000, SOURCE: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 161
INDEXED IN: Scopus WOS CrossRef
332
TITLE: Instrumentation amplifiers and voltage controlled current sources for LHC cryogenic instrumentation
AUTHORS: Agapito, JA; Barradas, NP ; Cardeira, FM; Casas, J; Fernandes, AP; Franco, FJ; Gomes, P; Goncalves, IC; Cachero, AH; Lozano, J; Martin, MA; Marques, JG; Paz, A; Prata, MJ; Ramalho, AJG; Ruiz, MAR; Santos, JP; Vieira, A;
PUBLISHED: 2000, SOURCE: 6th Workshop on Electronics for LHC Experiments in PROCEEDINGS OF THE SIXTH WORKSHOP ON ELECTRONICS FOR LHC EXPERIMENTS, VOLUME: 2000, ISSUE: 10
INDEXED IN: WOS
333
TITLE: Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers  Full Text
AUTHORS: Veloso, A; Freitas, PP ; Wei, P; Barradas, NP ; Soares, JC ; Almeida, B ; Sousa, JB ;
PUBLISHED: 2000, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 77, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef
334
TITLE: Neural network analysis of Rutherford backscattering data  Full Text
AUTHORS: Vieira, A; Barradas, NP ;
PUBLISHED: 2000, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 170, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef
335
TITLE: Simultaneous and consistent analysis of NRA, RES and ERDA data with the IBA DataFurnace  Full Text
AUTHORS: Barradas, NP ; Parascandola, S; Sealy, BJ; Grotzschel, R; Kreissig, U;
PUBLISHED: 2000, SOURCE: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 161
INDEXED IN: Scopus WOS CrossRef
336
TITLE: Bayesian error analysis of Rutherford backscattering spectra  Full Text
AUTHORS: Barradas, NP ; Jeynes, C; Jenkin, M; Marriott, PK;
PUBLISHED: 1999, SOURCE: 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis in THIN SOLID FILMS, VOLUME: 343, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef
337
TITLE: Bayesian inference analysis of ellipsometry data
AUTHORS: Barradas, NP ; Keddie, JL; Sackin, R;
PUBLISHED: 1999, SOURCE: PHYSICAL REVIEW E, VOLUME: 59, ISSUE: 5
INDEXED IN: Scopus WOS CrossRef
338
TITLE: Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis
AUTHORS: Nejim, A; Cristiano, F; Knights, AP; Barradas, NP ; Hemment, PLF; Coleman, PG;
PUBLISHED: 1999, SOURCE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 2
INDEXED IN: Scopus
339
TITLE: Electrical behaviour associated with defect tails in germanium implanted silicon
AUTHORS: Nejim, A; Gwilliam, RM; Emerson, NG; Knights, AP; Cristiano, F; Barradas, NP ; Jeynes, C;
PUBLISHED: 1999, SOURCE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 1
INDEXED IN: Scopus
340
TITLE: Growth of microcrystalline beta-SiC films on silicon by ECR plasma CVD  Full Text
AUTHORS: Toal, SJ; Reehal, HS; Barradas, NP ; Jeynes, C;
PUBLISHED: 1999, SOURCE: Symposium on Surface Processing - Laser, Lamp, Plasma, at the Annual Spring Meeting of the European-Materials-Society (E-MRS 96) in APPLIED SURFACE SCIENCE, VOLUME: 138, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
Page 34 of 39. Total results: 389.