Pedro Miguel Cândido Barquinha


AuthID: R-000-EY1

Confirmed Publications: 84



61
TITLE: Effect of annealing temperature on the properties of IZO films and IZO based transparent TFTs  Full Text
AUTHORS: Barquinha, P ; Goncalves, G; Pereira, L ; Martins, R ; Fortunato, E ;
PUBLISHED: 2007, SOURCE: 1st International Symposium on Transparent Conducting Oxides in THIN SOLID FILMS, VOLUME: 515, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
62
TITLE: Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films  Full Text
AUTHORS: Goncalves, G; Elangovan, E; Barquinha, P ; Pereira, L ; Martins, R ; Fortunato, E ;
PUBLISHED: 2007, SOURCE: 1st International Symposium on Transparent Conducting Oxides in THIN SOLID FILMS, VOLUME: 515, ISSUE: 24
INDEXED IN: Scopus WOS
IN MY: ORCID
63
TITLE: Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors  Full Text
AUTHORS: Martins, R ; Barquinha, P ; Pereira, L ; Ferreira, I ; Fortunato, E ;
PUBLISHED: 2007, SOURCE: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, VOLUME: 89, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
64
TITLE: Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors  Full Text
AUTHORS: Martins, R ; Barquinha, P ; Ferreira, I ; Pereira, L ; Goncalves, G; Fortunato, E ;
PUBLISHED: 2007, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 101, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
65
TITLE: A study on the electrical properties of ZnO based transparent TFTs
AUTHORS: Barquinha, P ; Fortunato, E ; Goncalves, A; Pimentel, A ; Marques, A; Pereira, L ; Martins, R ;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 1
INDEXED IN: Scopus WOS
IN MY: ORCID
66
TITLE: Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxide  Full Text
AUTHORS: Barquinha, P ; Pimentel, A ; Marques, A; Pereira, L ; Martins, R ; Fortunato, E ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
67
TITLE: Electrical performances of low temperature annealed hafnium oxide deposited at room temperature
AUTHORS: Pereira, L ; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 1
INDEXED IN: Scopus WOS
IN MY: ORCID
68
TITLE: Electron transport and optical characteristics in amorphous indium zinc oxide films  Full Text
AUTHORS: Martins, R ; Almeida, P ; Barquinha, P ; Pereira, L ; Pimentel, A ; Ferreira, I ; Fortunato, E ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
69
TITLE: Impedance study of the electrical properties of poly-Si thin film transistors  Full Text
AUTHORS: Pereira, L ; Raniero, L; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
70
TITLE: Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide  Full Text
AUTHORS: Barquinha, P ; Pimentel, A ; Marques, A; Pereira, L ; Martins, R ; Fortunato, E ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
Page 7 of 9. Total results: 84.

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