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151

TITLE: Erbium-doped nanocrystalline silicon thin films produced by RF sputtering - annealing effect on the Er emission
AUTHORS: Cerqueira, MF ; Monteiro, T ; Soares, MJ ; Kozanecki, A; Alpuim, P ; Alves, E ;
PUBLISHED: 2010, SOURCE: 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS23) in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, VOLUME: 7, ISSUE: 3-4

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152

TITLE: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation Full Text
AUTHORS: Magalhaes, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ ; Alves, E ; Monteiro, T ; Lorenz, K ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 108, ISSUE: 8

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153

TITLE: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation Full Text
AUTHORS: Magalhães, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ; Alves, E ; Monteiro, T ; Lorenz, K ;
PUBLISHED: 2010, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 108, ISSUE: 8

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154

TITLE: High temperature annealing of Europium implanted AlN Full Text
AUTHORS: Lorenz, K ; Magalhaes, S; Alves, E ; Peres, M; Monteiro, T ; Neves, AJ ; Bockowski, M;
PUBLISHED: 2010, SOURCE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, ISSUE: 19

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155

TITLE: Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots Full Text
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7

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156

TITLE: Morphological and optical studies of self-forming ZnO nanocolumn and nanocone arrays grown by PLD on various substrates Full Text
AUTHORS: Peres, M; Soares, MJ ; Neves, AJ ; Monteiro, T ; Sandana, VE; Teherani, F; Rogers, DJ;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7

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157

TITLE: Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Franco, N; Lorenz, K ; Alves, E ; Damilano, B; Massies, J; Dussaigne, A; Grandjean, N;
PUBLISHED: 2010, SOURCE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, ISSUE: 4

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158

TITLE: Optical doping and damage formation in AlN by Eu implantation Full Text
AUTHORS: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, ISSUE: 2

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159

TITLE: Structural and Optical Characterization of ZnO Nanowires Grown on Alumina by Thermal Evaporation Method
AUTHORS: Mute, A; Peres, M; Peiris, TC; Lourenco, AC; Lars R Jensen; Monteiro, T ;
PUBLISHED: 2010, SOURCE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, ISSUE: 4

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