231
TITLE: Optical properties of the synthetic nanocomposites SiO2/CdS/poly(styrene-co-maleic anhydride) and SiO2/CdS/poly(styrene-co-maleimide)
AUTHORS: Esteves, ACC; Monteiro, OC ; Barros Timmons, AMV ; Boemare, C; Soares, MJ ; Monteiro, T ; Trindade, T ;
PUBLISHED: 2002, SOURCE: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 2, ISSUE: 2
INDEXED IN: Scopus WOS Handle
233
TITLE: Searching for the influence of the sapphire nitridation conditions on GaN films grown by cyclic PLD
AUTHORS: Sanguino, P; Niehus, M; Koynov, S; Melo, L ; Schwarz, R ; Soares, MJ ; Boemare, C; Monteiro, T ;
PUBLISHED: 2002, SOURCE: Gan and Related Alloys - 2002 in Materials Research Society Symposium - Proceedings, VOLUME: 743
INDEXED IN: Scopus
234
TITLE: Study of calcium implanted GaN  Full Text
AUTHORS: Alves, E ; Liu, C; Lopes, EB ; da Silva, MF; Soares, JC ; Boemare, C; Soares, MJ ; Monteiro, T ;
PUBLISHED: 2002, SOURCE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef Handle
235
TITLE: Compositional dependence of the strain-free optical band gap in InxGa1-xN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Monteiro, T ; Pereira, E; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 78, ISSUE: 15
INDEXED IN: Scopus WOS CrossRef Handle
236
TITLE: Doping of GaN by ion implantation
AUTHORS: Alves, EJ ; Liu, C; Da Silva, MF; Soares, JC ; Correia, R; Monteiro, T ;
PUBLISHED: 2001, SOURCE: Microstructural Processes in Irradiated Materials-2000 in Materials Research Society Symposium - Proceedings, VOLUME: 650
INDEXED IN: Scopus
237
TITLE: Green and red emission in Ca implanted GaN samples  Full Text
AUTHORS: Monteiro, T ; Boemare, C; Soares, MJ ; Alves, E ; Liu, C;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef Handle
238
TITLE: Green, red and infrared Er-related emission in implanted GaN : Er and GaN : Er,O samples  Full Text
AUTHORS: Monteiro, T ; Soares, J; Correia, MR ; Alves, E ;
PUBLISHED: 2001, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 89, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef Handle
239
TITLE: High temperature annealing of Er implanted GaN  Full Text
AUTHORS: Alves, E ; Monteiro, T ; Soares, J; Santos, L; da Silva, MF; Soares, JC ; Lojkowski, W; Kolesnikov, D; Vianden, R; Correia, JG ;
PUBLISHED: 2001, SOURCE: Spring Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 81, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef Handle
240
TITLE: Indium content determination related with structural and optical properties of InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Monteiro, T ; Pereira, E; Soares, MR ; Alves, E ;
PUBLISHED: 2001, SOURCE: 4th European Workshop on Gallium Nitride in JOURNAL OF CRYSTAL GROWTH, VOLUME: 230, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef Handle
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