261
TITLE: Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN  Full Text
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLISHED: 1998, SOURCE: 2nd International Conference on Nitride Semiconductors (ICNS 97) in JOURNAL OF CRYSTAL GROWTH, VOLUME: 189
INDEXED IN: Scopus WOS CrossRef: 7
262
TITLE: Blue emission in Mg doped GaN studied by time resolved spectroscopy
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 2
INDEXED IN: Scopus WOS
263
TITLE: Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire  Full Text
AUTHORS: Monteiro, T ; Pereira, E; Correia, MR ; Xavier, C; Hofmann, DM; Meyer, BK; Fischer, S; Cremades, A; Piqueras, J;
PUBLISHED: 1997, SOURCE: 1996 International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) in JOURNAL OF LUMINESCENCE, VOLUME: 72-4
INDEXED IN: Scopus WOS CrossRef: 10
264
TITLE: Temperature behaviour of the yellow emission in GaN
AUTHORS: Seitz, R; Gaspar, C; Monteiro, T ; Pereira, E; Leroux, M; Beaumont, B; Gibart, P;
PUBLISHED: 1997, SOURCE: MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, VOLUME: 2, ISSUE: 33-41
INDEXED IN: Scopus WOS
265
TITLE: 2.2 eV luminescence in GaN
AUTHORS: Hofmann, DM; Kovalev, D; Steude, G; Volm, D; Meyer, BK; Xavier, C; Monteiro, T ; Pereira, E; Mokov, EN; Amano, H; Akasaki, I;
PUBLISHED: 1996, SOURCE: 1st International Symposium on Gallium Nitride and Related Materials in GALLIUM NITRIDE AND RELATED MATERIALS, VOLUME: 395
INDEXED IN: Scopus WOS
266
TITLE: Cathodoluminescence study of GaN epitaxial layers  Full Text
AUTHORS: Cremades, A; Piqueras, J; Xavier, C; Monteiro, T ; Pereira, E; Meyer, BK; Hofmann, DM; Fischer, S;
PUBLISHED: 1996, SOURCE: 4th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 96) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 42, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef Handle
267
TITLE: PHOTOLUMINESCENCE STUDIES OF HEAT-TREATED GAP-S SAMPLES
AUTHORS: MONTEIRO, T ; PEREIRA, E; DOMINGUEZADAME, F; PIQUERAS, J;
PUBLISHED: 1993, SOURCE: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, VOLUME: 140, ISSUE: 12
INDEXED IN: Scopus WOS
268
TITLE: SPATIAL-DISTRIBUTION OF MN-RELATED EMISSION IN GAP STUDIED BY CATHODOLUMINESCENCE AND PHOTOLUMINESCENCE  Full Text
AUTHORS: PIQUERAS, J; DOMINGUEZADAME, F; MONTEIRO, T ; PEREIRA, E;
PUBLISHED: 1993, SOURCE: MATERIALS CHEMISTRY AND PHYSICS, VOLUME: 35, ISSUE: 2
INDEXED IN: Scopus WOS
269
TITLE: LOW-TEMPERATURE BEHAVIOR OF A COMPLEX LUMINESCENCE IN MN-DOPED GAP IN THE REGION OF 1.7-1.8 EV  Full Text
AUTHORS: MONTEIRO, T ; PEREIRA, E;
PUBLISHED: 1992, SOURCE: 8TH INTERNATIONAL CONF ON DYNAMICAL PROCESSES IN EXCITED STATES OF SOLIDS ( DPC 91 ) in JOURNAL OF LUMINESCENCE, VOLUME: 53, ISSUE: 1-6
INDEXED IN: Scopus WOS
270
TITLE: LUMINESCENCE AT 1.96 EV IN N-TYPE GAP  Full Text
AUTHORS: PEREIRA, E; MONTEIRO, T ;
PUBLISHED: 1992, SOURCE: 8TH INTERNATIONAL CONF ON DYNAMICAL PROCESSES IN EXCITED STATES OF SOLIDS ( DPC 91 ) in JOURNAL OF LUMINESCENCE, VOLUME: 53, ISSUE: 1-6
INDEXED IN: Scopus WOS
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