Teresa Maria Fernandes Rodrigues Cabral Monteiro


AuthID: R-000-H53

Confirmed Publications: 153



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TITLE: The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD  Full Text
AUTHORS: Peres, M; Magalhaes, S; Rodrigues, J; Soares, MJ ; Fellmann, V; Neves, AJ ; Alves, E ; Daudin, B; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2011, SOURCE: Spring Meeting of the European-Materials-Research-Society (E-MRS) in OPTICAL MATERIALS, VOLUME: 33, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 3
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33
TITLE: YSZ:Dy3+ single crystal white emitter
AUTHORS: Soares, MRN; Soares, MJ ; Fernandes, AJS; Rino, L; Costa, FM ; Monteiro, T ;
PUBLISHED: 2011, SOURCE: JOURNAL OF MATERIALS CHEMISTRY, VOLUME: 21, ISSUE: 39
INDEXED IN: Scopus WOS CrossRef: 29
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34
TITLE: Damage recovery and optical activity in europium implanted wide gap oxides  Full Text
AUTHORS: Alves, E ; Marques, C; Franco, N; Alves, LC ; Peres, M; Soares, MJ ; Monteiro, T ;
PUBLISHED: 2010, SOURCE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, ISSUE: 19
INDEXED IN: Scopus WOS CrossRef: 3
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35
TITLE: Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures  Full Text
AUTHORS: Magalhaes, S; Lorenz, K ; Franco, N; Barradas, NP ; Alves, E ; Monteiro, T ; Amstatt, B; Fellmann, V; Daudin, B;
PUBLISHED: 2010, SOURCE: 7th International Symposium on Atomic Level Characterizations for New Materials and Devices in SURFACE AND INTERFACE ANALYSIS, VOLUME: 42, ISSUE: 10-11
INDEXED IN: Scopus WOS
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36
TITLE: Effect of Eu2O3 doping on Ta2O5 crystal growth by the laser-heated pedestal technique  Full Text
AUTHORS: Saggioro, BZ; Andreeta, MRB; Hernandes, AC; Macatrao, M; Peres, M; Costa, FM ; Monteiro, T ; Franco, N; Alves, E ;
PUBLISHED: 2010, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 313, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 3
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37
TITLE: Erbium-doped nanocrystalline silicon thin films produced by RF sputtering - annealing effect on the Er emission  Full Text
AUTHORS: Cerqueira, MF ; Monteiro, T ; Soares, MJ ; Kozanecki, A; Alpuim, P ; Alves, E ;
PUBLISHED: 2010, SOURCE: 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS23) in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, VOLUME: 7, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
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38
TITLE: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation  Full Text
AUTHORS: Magalhaes, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ ; Alves, E ; Monteiro, T ; Lorenz, K ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 108, ISSUE: 8
INDEXED IN: Scopus WOS
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39
TITLE: High temperature annealing of Europium implanted AlN  Full Text
AUTHORS: Lorenz, K ; Magalhaes, S; Alves, E ; Peres, M; Monteiro, T ; Neves, AJ ; Bockowski, M;
PUBLISHED: 2010, SOURCE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, ISSUE: 19
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ORCID | ResearcherID
40
TITLE: Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots  Full Text
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ORCID | ResearcherID
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