21
TITLE: Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN  Full Text
AUTHORS: Wahl, U ; De Vries, B; Decoster, S; Vantomme, A; Correia, JG ;
PUBLISHED: 2009, SOURCE: 16th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 267, ISSUE: 8-9
INDEXED IN: Scopus WOS CrossRef
22
TITLE: Lattice location of the group V elements As and Sb in ZnO  Full Text
AUTHORS: Wahl, U ; Correia, JG ; Decoster, S; Mendonca, T;
PUBLISHED: 2009, SOURCE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 23-24
INDEXED IN: Scopus WOS CrossRef
23
TITLE: Lattice location study of implanted In in Ge  Full Text
AUTHORS: Decoster, S; De Vries, B; Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef
24
TITLE: Transition Metal Impurities on the Bond-Centered Site in Germanium
AUTHORS: Decoster, S; Cottenier, S; De Vries, B; Emmerich, H; Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2009, SOURCE: PHYSICAL REVIEW LETTERS, VOLUME: 102, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
25
TITLE: Experimental evidence of tetrahedral interstitial and bond-centered Er in Ge  Full Text
AUTHORS: Decoster, S; De Vries, B; Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2008, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 93, ISSUE: 14
INDEXED IN: Scopus WOS CrossRef
26
TITLE: Amphoteric arsenic in GaN  Full Text
AUTHORS: Wahl, U ; Correia, JG ; Araújo, JP ; Rita, E; Soares, JC ; The ISOLDE Collaboration, ;
PUBLISHED: 2007, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 90, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef: 5
27
TITLE: Arsenic in ZnO and GaN: Substitutional cation or anion sites?
AUTHORS: Ulrich Wahl ; Joao Guilherme Correia ; Elisabete Rita; Ana Claudia Marques; Eduardo Alves ; Jose Carvalho Soares ;
PUBLISHED: 2007, SOURCE: Symposium on Semiconductor Defect Engineering Materials, Synthetic Structures and Devices II held at the 2007 MRS Spring Meeting in SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II, VOLUME: 994
INDEXED IN: Scopus WOS
28
TITLE: Lattice location of implanted as in ZnO  Full Text
AUTHORS: Wahl, U ; Rita, E; Correia, JG ; Marques, AC; Alves, E ; Soares, JC ;
PUBLISHED: 2007, SOURCE: Symposium on ZnO and Related Materials held at the 2006 EMRS Spring Meeting in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 42, ISSUE: 1-6
INDEXED IN: Scopus WOS CrossRef
29
TITLE: Noise and trigger efficiency characterization of cooled silicon pad detectors  Full Text
AUTHORS: Marques, AC ; Wahl, U ; Correia, JG ; Silva, MR; Rudge, A; Weilhammer, P; Soares, JC ;
PUBLISHED: 2007, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, VOLUME: 572, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
30
TITLE: Study of point defects and phase transitions in undoped and Nb-doped SrTiO3 using perturbed angular correlations  Full Text
AUTHORS: Marques, AC ; Correia, JG ; Wahl, U ; Soares, JC ;
PUBLISHED: 2007, SOURCE: 19th International Conference on Application of Accelerators in Research and Industry in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 261, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef
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