Ulrich Wahl


AuthID: R-000-HB1

Confirmed Publications: 87



71
TITLE: Optical doping of ZnO with Tm by ion implantation  Full Text
AUTHORS: Rita, E; Alves, E ; Wahl, U ; Correia, JG ; Neves, AJ ; Soares, MJ ; Monteiro, T ;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 25
IN MY: ORCID | ResearcherID
72
TITLE: Processing of rare earth doped GaN with ion beams
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O; Vantomme, A;
PUBLISHED: 2003, SOURCE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
73
TITLE: Erbium implantation in strontium titanate  Full Text
AUTHORS: Araujo, JP ; Wahl, U ; Alves, E ; Correia, JG ; Monteiro, T ; Soares, J ; Boemare, C;
PUBLISHED: 2002, SOURCE: 11th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 191, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ORCID | ResearcherID
74
TITLE: Lanthanide doped cubic boron nitride
AUTHORS: Vetter, U; Taniguchi, T; Wahl, U ; Correia, J ; Muller, A; Ronning, C; Hofsass, H; Dietrich, M;
PUBLISHED: 2002, SOURCE: Quantum Confined Semiconductor Nanostructures in Materials Research Society Symposium - Proceedings, VOLUME: 744
INDEXED IN: Scopus
IN MY: ORCID
75
TITLE: Lattice location of implanted 147Nd and 147* Pm in GaN using emission channeling  Full Text
AUTHORS: De Vries, B; Wahl, U ; Vantomme, A; Correia, JG ;
PUBLISHED: 2002, SOURCE: 2nd International Workshop on Nitride Semiconductors, IWN 2002 in Physica Status Solidi C: Conferences, ISSUE: 1
INDEXED IN: Scopus CrossRef
IN MY: ORCID
76
TITLE: Lattice location of implanted Ag in Si  Full Text
AUTHORS: Wahl, U ; Correia, JG ; Vantomme, A;
PUBLISHED: 2002, SOURCE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
77
TITLE: Direct evidence for implanted Fe on substitutional Ga sites in GaN  Full Text
AUTHORS: Wahl, U ; Vantomme, A; Langouche, G; Correia, JG ; Peralta, L; ISOLDE Collaboration, ;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 78, ISSUE: 21
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
78
TITLE: Emission channeling studies of implanted Er-167m in InP  Full Text
AUTHORS: Wahl, U ; Vantomme, A; Langouche, G; J.P Araújo ; The ISOLDE collaboration;
PUBLISHED: 2001, SOURCE: 12th International Conference on Ion Beam Modification of Materials (IBMM2000) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 175
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | ResearcherID
79
TITLE: Electron-gamma perturbed angular correlation studies on high-T-C superconductors  Full Text
AUTHORS: Correia, JG ; Araujo, JP ; Marques, JG ; Ramos, AR ; Lourenco, AA; Amaral, V ; Galindo, V; Senateur, JP; Weiss, F; Wahl, U ; Melo, AA; Soares, JC ; Sousa, JB ;
PUBLISHED: 2000, SOURCE: HYPERFINE INTERACTIONS, VOLUME: 129, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
80
TITLE: Emission channeling studies of Pr in GaN  Full Text
AUTHORS: Wahl, U ; Vantomme, A; Langouche, G; J.P Araújo ; Peralta, L ; Correia, JG ; ISOLDE Collaboration, ;
PUBLISHED: 2000, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 88, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 50
IN MY: ORCID | ResearcherID
Page 8 of 9. Total results: 87.

A place for researchers and their institutions

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service