161
TITLE: Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers  Full Text
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E ; Neves, AJ; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2016, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 178
INDEXED IN: Scopus WOS CrossRef: 3
162
TITLE: Anisotropy of electrical conductivity in dc due to intrinsic defect formation in alpha-Al2O3 single crystal implanted with Mg ions  Full Text
AUTHORS: Tardio, M; Egana, A; Ramirez, R; Munoz Santiuste, JE; Alves, E ;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
INDEXED IN: WOS
163
TITLE: Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al<inf>2</inf>O<inf>3</inf> single crystal implanted with Mg ions
AUTHORS: Tardío M.; Egaña A.; Ramírez R.; Muñoz-Santiuste J.E.; Alves E. ;
PUBLISHED: 2016, SOURCE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 379
INDEXED IN: Scopus CrossRef
164
TITLE: Composition measurement of epitaxial ScxGa1-xN films  Full Text
AUTHORS: Tsui, HCL; Goff, LE; Barradas, NP ; Alves, E ; Pereira, S; Palgrave, RG; Davies, RJ; Beere, HE; Farrer, I; Ritchie, DA; Moram, MA;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
165
TITLE: Correction to "Spectroscopic Analysis of Eu 3+ Implanted and Annealed GaN Layers and Nanowires"
AUTHORS: Rodrigues, J; Leitão, MF; Carreira, JFC; Ben Sedrine, N; Santos, NF; Felizardo, M ; Auzelle, T; Daudin, B; Alves, E ; Neves, AJ; Correia, MR; Costa, FM; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2016, SOURCE: Journal of Physical Chemistry C, VOLUME: 120, ISSUE: 12
INDEXED IN: Scopus CrossRef: 3
166
TITLE: Deposition in the inner and outer corners of the JET divertor with carbon wall and metallic ITER-like wall
AUTHORS: Beal, J; Widdowson, A; Heinola, K; Baron-Wiechec, A; Gibson, KJ; Coad, JP; Alves, E ; Lipschultz, B; Kirschner, A; Esser, HG; Matthews, GF; Brezinsek, S; JET Contributors, ;
PUBLISHED: 2016, SOURCE: 15th International Conference on Plasma-Facing Materials and Components for Fusion Applications (PFMC) in PHYSICA SCRIPTA, VOLUME: T167, ISSUE: T167
INDEXED IN: Scopus WOS CrossRef
167
TITLE: Determination of 9Be(p,p0)9Be, 9Be(p,d0)8Be and 9Be(p,α0)6Li cross sections at 150°in the energy range 0.5-2.35 MeV  Full Text
AUTHORS: Catarino, N; Barradas, NP ; Alves, E ;
PUBLISHED: 2016, SOURCE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 371
INDEXED IN: Scopus CrossRef
168
TITLE: Determination of Be-9(p,p(0))Be-9, Be-9(p,d(0))Be-8 and Be-9(p,alpha(0))Li-6 cross sections at 150 degrees in the energy range 0.5-2.35 MeV  Full Text
AUTHORS: Catarino, N; Barradas, NP; Alves, E ;
PUBLISHED: 2016, SOURCE: 22nd International Conference on Ion Beam Analysis (IBA) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 371
INDEXED IN: WOS
169
TITLE: Effect of AlN content on the lattice site location of terbium ions in AlxGa1-xN compounds  Full Text
AUTHORS: Fialho, M; Rodrigues, J; Magalhaes, S; Correia, MR; Monteiro, T ; Lorenz, K ; Alves, E ;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 4
170
TITLE: Electrical insulation properties of RF-sputtered LiPON layers towards electrochemical stability of lithium batteries
AUTHORS: Vieira, EMF; Ribeiro, JF; Silva, MM ; Barradas, NP ; Alves, E ; Alves, A; Correia, MR; Goncalves, LM ;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 48
INDEXED IN: Scopus WOS CrossRef: 7 Handle
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