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323

TITLE: Ion implantation of Cd and Ag into AlN and GaN Full Text
AUTHORS: Miranda, SMC; Kessler, P; Correia, JG ; Vianden, R; Johnston, K; Alves, E ; Lorenz, K ;
PUBLISHED: 2012, SOURCE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, ISSUE: 3-4

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324

TITLE: Optical doping of AlxGa1-xN compounds by Ion Implantation of Tm ions Full Text
AUTHORS: Fialho, M; Lorenz, K ; Magalhaes, S; Redondo Cubero, A; Rodrigues, J; Santos, NF; Monteiro, T ; Alves, E ;
PUBLISHED: 2012, SOURCE: 19th International Conference on Ion Implantation Technology (IIT) in ION IMPLANTATION TECHNOLOGY 2012, VOLUME: 1496

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325

TITLE: Optical properties of LFZ grown beta-Ga2O3:Eu3+ fibres Full Text
AUTHORS: Santos, NF; Rodrigues, J; Fernandes, AJS; Alves, LC ; Alves, E ; Costa, FM ; Monteiro, T ;
PUBLISHED: 2012, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 258, ISSUE: 23

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326

TITLE: Rare earth co-doping nitride layers for visible light Full Text
AUTHORS: Rodrigues, J; Miranda, SMC; Santos, NF; Neves, AJ ; Alves, E ; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2012, SOURCE: MATERIALS CHEMISTRY AND PHYSICS, VOLUME: 134, ISSUE: 2-3

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327

TITLE: Room temperature magnetic response of sputter deposited TbDyFe films as a function of the deposition parameters
AUTHORS: Rebouta, L ; Martins, P; Lanceros Mendez, S ; Barandiaran, JM; Gutierrez, J; Alves, LC ; Alves, E ;
PUBLISHED: 2012, SOURCE: JOURNAL OF NANO RESEARCH, VOLUME: 18-19

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328

TITLE: Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents Full Text
AUTHORS: Redondo-Cubero, A; Hierro, A; J.-M Chauveau; Lorenz, K ; Tabares, G; Franco, N; Alves, E ; Muñoz, E;
PUBLISHED: 2012, SOURCE: CrystEngComm, VOLUME: 14, ISSUE: 5

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329

TITLE: Single phase alpha-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
AUTHORS: Redondo Cubero, A ; Hierro, A; M Chauveau; Lorenz, K ; Tabares, G; Franco, N; Alves, E ; Munoz, E;
PUBLISHED: 2012, SOURCE: CRYSTENGCOMM, VOLUME: 14, ISSUE: 5

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330

TITLE: Stopping power of C in Si Full Text
AUTHORS: Nuno P Barradas ; Alves, E ; Siketic, Z; Bogdanovic B Radovic;
PUBLISHED: 2012, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273

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