ProfileOfResearchers

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593

TITLE: Effect of the matrix on the 1.5 mu m photoluminescence of Er-doped silicon quantum dots
AUTHORS: Cerqueira, MF ; Stepikhova, M; Losurdo, M; Monteiro, T ; Soares, MJ ; Peres, M; Neves, A ; Alves, E ;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 2

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594

TITLE: Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing Full Text
AUTHORS: Nogales, E; Martin, RW; O'Donnell, KP; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 3

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595

TITLE: Hardware and software improvements in the Hotbird
AUTHORS: Franco, N; Alves, E ; Barradas, NP ;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 2

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596

TITLE: High temperature annealing of rare earth implanted GaN films: Structural and optical properties Full Text
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Wojdak, M; Braud, A; Monteiro, T ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7

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597

TITLE: Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques Full Text
AUTHORS: Ferreira, I ; Fortunato, E ; Vilarinho, P ; Viana, AS ; Ramos, AR ; Alves, E ; Martins, R ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20

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CrossRef: 28

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598

TITLE: Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques
AUTHORS: Johnston, K; Henry, MO; McCabe, D; McGlynn, E; Dietrich, M; Alves, E ; Xia, M;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 16

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599

TITLE: Implantation of Er/Yb ions into gallium nitride
AUTHORS: Prajzler, V; Jerabek, V; Huttel, I; Alves, E ; Buchal, C; Spirkova, J; Oswald, J; Perina, V; Boldyryeva, H; Zavadil, J;
PUBLISHED: 2006, SOURCE: WSEAS Transactions on Electronics, VOLUME: 3, ISSUE: 4

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