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Eduardo Jorge da Costa Alves
AuthID:
R-000-4EK
Publications
Confirmed
To Validate
Document Source:
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Document Type:
All Document Types
Article (512)
Proceedings Paper (76)
Correction (4)
Review (2)
Editorial Material (2)
Erratum (1)
Year Start - End:
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Order:
Year Dsc
Year Asc
Cit. WOS Dsc
IF WOS Dsc
Cit. Scopus Dsc
IF Scopus Dsc
Title Asc
Title Dsc
Results:
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Confirmed Publications: 597
591
TITLE:
LATTICE LOCATION OF ER IN GAAS AND AL0.5GA0.5AS LAYERS GROWN BY MBE ON (100) GAAS SUBSTRATES
Full Text
AUTHORS:
ALVES, E
; DASILVA, MF; EVANS, KR; JONES, CR; MELO, AA;
SOARES, JC
;
PUBLISHED:
1993
,
SOURCE:
8TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS
in
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,
VOLUME:
80-1,
ISSUE:
PART 1
INDEXED IN:
Scopus
WOS
IN MY:
ORCID
|
ResearcherID
592
TITLE:
EPITAXIAL REGROWTH AND LATTICE LOCATION OF INDIUM IMPLANTED IN ARSENIC-PREAMORPHIZED SILICON
Full Text
AUTHORS:
ALVES, E
; DASILVA, MF;
SOARES, JC
; MELO, AA; MAY, J; HASLAR, V; SEIDL, P; FEUSER, U; VIANDEN, R;
PUBLISHED:
1991
,
SOURCE:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,
VOLUME:
55,
ISSUE:
1-4
INDEXED IN:
Scopus
WOS
IN MY:
ORCID
|
ResearcherID
593
TITLE:
LATTICE SITE LOCATION AND OUTDIFFUSION OF MERCURY IMPLANTED IN GAAS
Full Text
AUTHORS:
SOARES, JC
; MELO, AA;
ALVES, E
; DASILVA, MF; GILLIN, WP; SEALY, BJ;
PUBLISHED:
1991
,
SOURCE:
7TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS ( IBMM 90 )
in
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,
VOLUME:
59,
ISSUE:
PART 2
INDEXED IN:
Scopus
WOS
IN MY:
ORCID
|
ResearcherID
594
TITLE:
VACANCY ACCEPTOR COMPLEXES IN GERMANIUM PRODUCED BY ION-IMPLANTATION
Full Text
AUTHORS:
FEUSER, U; VIANDEN, R;
ALVES, E
; DASILVA, MF; SZILAGYI, E; PASZTI, F;
SOARES, JC
;
PUBLISHED:
1991
,
SOURCE:
7TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS ( IBMM 90 )
in
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,
VOLUME:
59,
ISSUE:
PART 2
INDEXED IN:
Scopus
WOS
IN MY:
ORCID
|
ResearcherID
595
TITLE:
REGROWTH OF INDIUM-IMPLANTED (100), (110) AND (111) SILICON-CRYSTALS STUDIED WITH RUTHERFORD BACKSCATTERING AND PERTURBED ANGULAR-CORRELATION TECHNIQUES
Full Text
AUTHORS:
ALVES, E
; DASILVA, MF; MELO, AA;
SOARES, JC
; FEUSER, U; VIANDEN, R;
PUBLISHED:
1989
,
SOURCE:
SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON
in
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
VOLUME:
4,
ISSUE:
1-4
INDEXED IN:
Scopus
WOS
IN MY:
ORCID
|
ResearcherID
596
TITLE:
LATTICE LOCATION STUDIES ON HAFNIUM, THALLIUM AND LEAD IMPLANTED MAGNESIUM SINGLE CRYSTALS.
AUTHORS:
da Silva, MF; da Silva, MR;
Alves, E
; Melo, A;
Soares, JC
; Winand, J; Vianden, R;
PUBLISHED:
1984
,
SOURCE:
Surface Engineering: Surface Modification of Materials.
in
NATO ASI Series, Series E: Applied Sciences,
ISSUE:
85
INDEXED IN:
Scopus
IN MY:
ORCID
597
TITLE:
NEW HAFNIUM-BERYLLIUM SYSTEM PRODUCED BY ION IMPLANTATION AND ANNEALING TECHNIQUES.
AUTHORS:
Soares, JC
; Melo, AA; DaSilva, MF;
Alves, EJ
; Freitag, K; Vianden, R;
PUBLISHED:
1984
,
SOURCE:
Ion Implantation and Ion Beam Processing of Materials, Symposium.
in
Materials Research Society Symposia Proceedings,
VOLUME:
27
INDEXED IN:
Scopus
IN MY:
ORCID
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