ProfileOfResearchers

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602

TITLE: Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN
AUTHORS: Lorenz, K ; Nogales, E; Nedelec, R; Penner, J; Vianden, R; Alves, E ; Martin, RW; O'Donnell, KP;
PUBLISHED: 2006, SOURCE: Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting in GaN, AIN, InN and Related Materials, VOLUME: 892

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603

TITLE: Investigation of the nonlinear optical characteristics of composite materials based on sapphire with silver, copper, and gold nanoparticles by the reflection Z-scan method Full Text
AUTHORS: Ganeev, RA; Ryasnyanskii, AI; Stepanov, AL; Usmanov, T; Marques, C; da Silva, RC; Alves, E ;
PUBLISHED: 2006, SOURCE: OPTICS AND SPECTROSCOPY, VOLUME: 101, ISSUE: 4

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604

TITLE: Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition Full Text
AUTHORS: Rogers, DJ; Teherani, FH; Monteiro, T ; Soares, M ; Neves, A ; Carmo, M; Pereira, S; Correia, MR ; Lusson, A; Alves, E ; Barradas, NP ; Morrod, JK; Prior, KA; Kung, P; Yasan, A; Razeghi, M;
PUBLISHED: 2006, SOURCE: 12th International Conference on II-VI Compounds in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 4, VOLUME: 3, ISSUE: 4

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CrossRef: 16

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605

TITLE: Ion Beam Analysis of Ge/Si Dots Grown on Ultrathin SiO<sub>2</sub> Interlayers
AUTHORS: Alexandra Fonseca; Eduardo Alves ; Joaquim P Leitão; Nikolai A Sobolev; Celeste C Carmo; Alexander I Nikiforov;
PUBLISHED: 2006, SOURCE: Materials Science Forum, VOLUME: 514-516

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606

TITLE: Ion beam characterisation of ODS steel samples after long term annealing conditions Full Text
AUTHORS: Alves, LC ; Alves, E ; Paul, A; da Silva, MR ; Odriozola, JA;
PUBLISHED: 2006, SOURCE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, ISSUE: 1-2 SPEC. ISS.

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607

TITLE: Ion synthesis and optical properties of gold nanoparticles in an Al2O3 matrix Full Text
AUTHORS: Stepanov, AL; Marques, C; Alves, E ; da Silva, RC; Silva, MR; Ganeev, RA; Ryasnyansky, AI; Usmanov, T;
PUBLISHED: 2006, SOURCE: TECHNICAL PHYSICS, VOLUME: 51, ISSUE: 11

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608

TITLE: Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation Full Text
AUTHORS: Hernandez, S; Cusco, R; Artus, L; Nogales, E; Martin, RW; O'Donnell, KP; Halambalakis, G; Briot, O; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7

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609

TITLE: Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation Full Text
AUTHORS: Hernández, S; Cuscó, R; Artús, L; Nogales, E; R.W Martin; K.P O’Donnell; Halambalakis, G; Briot, O; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Optical Materials, VOLUME: 28, ISSUE: 6-7

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610

TITLE: Lattice sites of implanted Cu and Ag in ZnO Full Text
AUTHORS: Wahl, U ; Rita, E; Correia, JG ; Agne, T; Alves, E ; Soares, JC ;
PUBLISHED: 2006, SOURCE: Symposium on ZnO and Related Materials held at the 2005 Spring Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 39, ISSUE: 1-4

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