ProfileOfResearchers

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692

TITLE: Direct evidence for strain inhomogeneity in InxGa1-xN epilayers by Raman spectroscopy Full Text
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Watson, IM; Liu, C; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 85, ISSUE: 12

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693

TITLE: Electrical conductivity of as-grown and oxidized MgO : Li crystals implanted with Li ions Full Text
AUTHORS: Tardio, M; Ramirez, R; Gonzalez, R; Pinto, JV ; da Silva, RC; Alves, E ; Chen, Y;
PUBLISHED: 2004, SOURCE: 12th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 218, ISSUE: 1-4

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694

TITLE: Electrical conductivity of as-grown and oxidized MgO:Li crystals implanted with Li ions Full Text
AUTHORS: Tardı́o, M; Ramı́rez, R; González, R; J.V Pinto; R.C da Silva; Alves, E ; Chen, Y;
PUBLISHED: 2004, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 218

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695

TITLE: Erratum to “Optical absorption of a Li-related impurity in ZnO” Full Text
AUTHORS: Deirdre Mc Cabe; Karl Johnston; Martin O. Henry; Enda Mc Glynn; Eduardo Alves ; John Davies, J;
PUBLISHED: 2004, SOURCE: Physica B: Condensed Matter, VOLUME: 351, ISSUE: 1-2

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696

TITLE: Exchange bias of MnPt/CoFe films prepared by ion beam deposition Full Text
AUTHORS: Rickart, M; Freitas, PP ; Trindade, IG ; Barradas, NP ; Alves, E ; Salgueiro, M ; Muga, N ; Ventura, J ; Sousa, JB ; Proudfoot, G; Pearson, D; Davis, M;
PUBLISHED: 2004, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 95, ISSUE: 11

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CrossRef: 16

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697

TITLE: Extended X-ray absorption fine structure studies of thulium doped GaN epilayers Full Text
AUTHORS: Katchkanov, V; Mosselmans, JFW; Dalmasso, S; O'Donnell, KP; Hernandez, S; Wang, K; Martin, RW; Briot, O; Rousseau, N; Halambalakis, G; Lorenz, K ; Alves, E ;
PUBLISHED: 2004, SOURCE: European Materials Research Society 2004, Symposium L. InN in Superlattices and Microstructures, VOLUME: 36, ISSUE: 4-6

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698

TITLE: Formation of AlxGa1-xSb films over GaSb substrates by Al diffusion
AUTHORS: Ruiz, CM; Barradas, NP ; Alves, E ; Plaza, JL; Bermudez, V; Dieguez, E;
PUBLISHED: 2004, SOURCE: 10th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10) in EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, VOLUME: 27, ISSUE: 1-3

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699

TITLE: High-temperature annealing and optical activation of Eu-implanted GaN Full Text
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 85, ISSUE: 14

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700

TITLE: Influence of O and C co-implantation on the lattice site of Er in GaN Full Text
AUTHORS: De Vries, B; Matias, V; Vantomme, A; Wahl, U ; Rita, EMC; Alves, E ; Lopes, AML ; Correia, JG ; The ISOLDE Collaboration, ;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 84, ISSUE: 21

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CrossRef: 14

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