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802

TITLE: Compositional dependence of the strain-free optical band gap in InxGa1-xN layers Full Text
AUTHORS: Pereira, S ; Correia, MR ; Monteiro, T ; Pereira, E; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 78, ISSUE: 15

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803

TITLE: Compositional pulling effects in InxGa1-x/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ;
PUBLISHED: 2001, SOURCE: PHYSICAL REVIEW B, VOLUME: 64, ISSUE: 20

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804

TITLE: Depth resolved studies of indium content and strain in InGaN layers Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ; Sequeira, AD; Franco, N; Watson, IM;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1

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CrossRef: 3

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805

TITLE: Doping of GaN by ion implantation
AUTHORS: Alves, EJ ; Liu, C; Da Silva, MF; Soares, JC ; Correia, R; Monteiro, T ;
PUBLISHED: 2001, SOURCE: Microstructural Processes in Irradiated Materials-2000 in Materials Research Society Symposium - Proceedings, VOLUME: 650

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806

TITLE: Elastic properties of (Ti,Al,Si) N nanocomposite films Full Text
AUTHORS: Carvalho, S ; Vaz, F ; Rebouta, L ; Schneider, D; Cavaleiro, A ; Alves, E ;
PUBLISHED: 2001, SOURCE: 7th International Conference on Plasma Surface Engineering (PSE 2000) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 142

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CrossRef: 37

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807

TITLE: Fe ion implantation in GaN: Damage, annealing, and lattice site location Full Text
AUTHORS: Liu, C; Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ;
PUBLISHED: 2001, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 90, ISSUE: 1

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808

TITLE: Green and red emission in Ca implanted GaN samples Full Text
AUTHORS: Monteiro, T ; Boemare, C; Soares, MJ ; Alves, E ; Liu, C;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308

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809

TITLE: Green, red and infrared Er-related emission in implanted GaN : Er and GaN : Er,O samples Full Text
AUTHORS: Monteiro, T ; Soares, J; Correia, MR ; Alves, E ;
PUBLISHED: 2001, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 89, ISSUE: 11

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810

TITLE: Heavy ion implantation in GaN epilayers Full Text
AUTHORS: Alves, E ; Marques, JG ; Da Silva, MF; Soares, JC; Bartels, J; Vianden, R;
PUBLISHED: 2001, SOURCE: International Conference on Defects in Insulating Materials in RADIATION EFFECTS AND DEFECTS IN SOLIDS, VOLUME: 156, ISSUE: 1-4

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