Eduardo Jorge da Costa Alves


AuthID: R-000-4EK

Confirmed Publications: 908



821
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 79, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef: 46
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
822
TITLE: Microstructure and mechanical properties of nanocomposite (Ti,Si,Al)N coatings  Full Text
AUTHORS: Carvalho, S ; Rebouta, L ; Cavaleiro, A ; Rocha, LA ; Gomes, J ; Alves, E ;
PUBLISHED: 2001, SOURCE: 28th International Conference on Metallurgical Coatings and Thin Films in THIN SOLID FILMS, VOLUME: 398
INDEXED IN: Scopus WOS CrossRef: 86
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
823
TITLE: Optical and structural changes of FE implanted sapphire
AUTHORS: Marques, CP; Alves, EJ ; McHargue, CJ; Da Silva, MF; Soares, JC ; Correia, R; Soares, MJ ; Monteiro, T ;
PUBLISHED: 2001, SOURCE: Ion Beam Synthesis and Processing of Advanced Materials in Materials Research Society Symposium - Proceedings, VOLUME: 647
INDEXED IN: Scopus
IN MY: ORCID | CIÊNCIAVITAE
824
TITLE: Optical characterization of AlGaN/GaN MQW's
AUTHORS: Rocha, RA; Monteiro, T ; Pereira, E; Alves, E ;
PUBLISHED: 2001, SOURCE: GaN and Related Alloys 2000 in Materials Research Society Symposium - Proceedings, VOLUME: 639
INDEXED IN: Scopus
IN MY: ORCID | CIÊNCIAVITAE
825
TITLE: Optical doping of nitrides by ion implantation  Full Text
AUTHORS: Alves, E ; Lorenz, K ; Vianden, R; Boemare, C; Soares, MJ ; Monteiro, T ;
PUBLISHED: 2001, SOURCE: Workshop on Advanced Materials Produced and Analyzed with Ion Beams in MODERN PHYSICS LETTERS B, VOLUME: 15, ISSUE: 28-29
INDEXED IN: Scopus WOS
IN MY: ResearcherID
826
TITLE: OPTICAL DOPING OF NITRIDES BY ION IMPLANTATION  Full Text
AUTHORS: ALVES, E ; LORENZ, K ; VIANDEN, R; BOEMARE, C; SOARES, MJ; MONTEIRO, T ;
PUBLISHED: 2001, SOURCE: Modern Physics Letters B - Mod. Phys. Lett. B, VOLUME: 15, ISSUE: 28n29
INDEXED IN: CrossRef: 23
IN MY: ORCID | CIÊNCIAVITAE
827
TITLE: Photoluminescence and lattice location of Eu and Pr implanted GaN samples  Full Text
AUTHORS: Monteiro, T ; Boemare, C; Soares, MJ ; Ferreira, RAS ; Carlos, LD ; Lorenz, K ; Vianden, R; Alves, E ;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef Handle
IN MY: ORCID | CIÊNCIAVITAE
828
TITLE: Photoluminescence studies in ZnO samples  Full Text
AUTHORS: Boemare, C; Monteiro, T ; Soares, MJ ; Guilherme, JG; Alves, E ;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef Handle
IN MY: ORCID | CIÊNCIAVITAE
829
TITLE: Raman spectroscopy studies in InGaN/GaN wurtzite epitaxial films
AUTHORS: Correia, MR ; Pereira, S ; Monteiro, T ; Pereira, E; Alves, E ;
PUBLISHED: 2001, SOURCE: GaN and Related Alloys 2000 in Materials Research Society Symposium - Proceedings, VOLUME: 639
INDEXED IN: Scopus
IN MY: ORCID | CIÊNCIAVITAE
830
TITLE: Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films  Full Text
AUTHORS: Losurdo, M; Cerqueira, MF ; Stepikhova, MV; Alves, E ; Giangregorio, MM; Pinto, P; Ferreira, JA;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
Page 83 of 91. Total results: 908.

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