151
TITLE: Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots  Full Text
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 4
152
TITLE: Isotopic fingerprints of Pt-containing luminescence centers in highly enriched Si-28
AUTHORS: Steger, M; Yang, A; Sekiguchi, T; Saeedi, K; Thewalt, MLW; Henry, MO; Johnston, K; Alves, E ; Wahl, U ; Riemann, H; Abrosimov, NV; Churbanov, MF; Gusev, AV; Kaliteevskii, AK; Godisov, ON; Becker, P; J Pohl;
PUBLISHED: 2010, SOURCE: PHYSICAL REVIEW B, VOLUME: 81, ISSUE: 23
INDEXED IN: Scopus WOS CrossRef
153
TITLE: Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Roqan, IS; O'Donnell, KP; Nishikawa, A; Fujiwara, Y; Bockowski, M;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 97, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
154
TITLE: Mn-doped ZnO nanocrystals embedded in Al2O3: structural and electrical properties  Full Text
AUTHORS: Khodorov, A ; Levichev, S ; Rolo, AG ; Karzazi, O; Chahboun, A ; Novak, J; Vorobiev, A; Tavares, CJ ; Eyidi, D; Riviere, JP; Beaufort, MF; Barradas, NP ; Alves, E ; Barber, DJ; Lanceros Mendez, S ; Gomes, MJM ;
PUBLISHED: 2010, SOURCE: NANOTECHNOLOGY, VOLUME: 21, ISSUE: 50
INDEXED IN: Scopus WOS CrossRef
155
TITLE: Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies  Full Text
AUTHORS: Pinto, SRC; Rolo, AG ; Chahboun, A ; Maja Buljan; Khodorov, A ; Kashtiban, RJ; Bangert, U; Barradas, NP ; Alves, E ; Bernstorff, S; Gomes, MJM ;
PUBLISHED: 2010, SOURCE: MICROELECTRONIC ENGINEERING, VOLUME: 87, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef
156
TITLE: N-Doped Photocatalytic Titania Thin Films on Active Polymer Substrates
AUTHORS: Tavares, CJ ; Marques, SM; Lanceros Mendez, S ; Rebouta, L ; Alves, E ; Barradas, NP ; Munnik, F; Girardeau, T; P Riviere;
PUBLISHED: 2010, SOURCE: International Conference on Surface, Coatings and Nanostructured Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
157
TITLE: Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Franco, N; Lorenz, K ; Alves, E ; Damilano, B; Massies, J; Dussaigne, A; Grandjean, N;
PUBLISHED: 2010, SOURCE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef: 3
158
TITLE: Optical doping and damage formation in AlN by Eu implantation  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef: 27
159
TITLE: Raman study of doped-ZnO thin films grown by rf sputtering  Full Text
AUTHORS: Cerqueira, MF ; Rolo, AG ; Viseu, T ; Ayres de Campos, JA ; de Lacerda Aroso, T ; Oliveira, F; Vasilevskiy, MI ; Alves, E ;
PUBLISHED: 2010, SOURCE: Spring Meeting of the European-Materials-Research-Society/Symposium F on Advances in Transparent Electronics-From Materials to Devices in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 9, VOLUME: 7, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
160
TITLE: RE Implantation and Annealing of III-Nitrides
AUTHORS: Katharina Lorenz ; Eduardo Alves ; Florence Gloux; Pierre Ruterana;
PUBLISHED: 2010, SOURCE: RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS, VOLUME: 124
INDEXED IN: Scopus WOS CrossRef
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