Eduardo Jorge da Costa Alves


AuthID: R-000-4EK

Confirmed Publications: 597



521
TITLE: Optical and structural changes of FE implanted sapphire
AUTHORS: Marques, CP; Alves, EJ ; McHargue, CJ; Da Silva, MF; Soares, JC ; Correia, R; Soares, MJ ; Monteiro, T;
PUBLISHED: 2001, SOURCE: Ion Beam Synthesis and Processing of Advanced Materials in Materials Research Society Symposium - Proceedings, VOLUME: 647
INDEXED IN: Scopus
IN MY: ORCID
522
TITLE: Optical characterization of AlGaN/GaN MQW's
AUTHORS: Rocha, RA; Monteiro, T; Pereira, E; Alves, E ;
PUBLISHED: 2001, SOURCE: GaN and Related Alloys 2000 in Materials Research Society Symposium - Proceedings, VOLUME: 639
INDEXED IN: Scopus
IN MY: ORCID
523
TITLE: Optical doping of nitrides by ion implantation  Full Text
AUTHORS: Alves, E ; Lorenz, K ; Vianden, R; Boemare, C; Soares, MJ ; Monteiro, T ;
PUBLISHED: 2001, SOURCE: Workshop on Advanced Materials Produced and Analyzed with Ion Beams in MODERN PHYSICS LETTERS B, VOLUME: 15, ISSUE: 28-29
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
524
TITLE: Photoluminescence and lattice location of Eu and Pr implanted GaN samples  Full Text
AUTHORS: Monteiro, T ; Boemare, C; Soares, MJ ; Ferreira, RAS ; Carlos, LD ; Lorenz, K ; Vianden, R; Alves, E ;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef: 78
IN MY: ORCID | ResearcherID
525
TITLE: Photoluminescence studies in ZnO samples  Full Text
AUTHORS: Boemare, C; Monteiro, T ; Soares, MJ ; Guilherme, JG; Alves, E ;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef: 65
IN MY: ORCID | ResearcherID
526
TITLE: Raman spectroscopy studies in InGaN/GaN wurtzite epitaxial films
AUTHORS: Correia, MR ; Pereira, S ; Monteiro, T; Pereira, E; Alves, E ;
PUBLISHED: 2001, SOURCE: GaN and Related Alloys 2000 in Materials Research Society Symposium - Proceedings, VOLUME: 639
INDEXED IN: Scopus
IN MY: ORCID
527
TITLE: Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films  Full Text
AUTHORS: Losurdo, M; Cerqueira, MF ; Stepikhova, MV; Alves, E ; Giangregorio, MM; Pinto, P; Ferreira, JA;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | ResearcherID
528
TITLE: Strain and compositional analysis of InGaN/GaN layers
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; Trager Cowan, C; Sweeney, F; Edwards, PR; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2001, SOURCE: GaN and Related Alloys 2000 in Materials Research Society Symposium - Proceedings, VOLUME: 639
INDEXED IN: Scopus
IN MY: ORCID
529
TITLE: Study of Fe+ implanted GaN  Full Text
AUTHORS: Alves, E ; Liu, C; Waerenborgh, JC ; da Silva, MF; Soares, JC ;
PUBLISHED: 2001, SOURCE: 12th International Conference on Ion Beam Modification of Materials (IBMM2000) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 175
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
530
TITLE: Study of new surface structures created on sapphire by Co ion implantation  Full Text
AUTHORS: Marques, C; Cruz, MM ; da Silva, RC; Alves, E ;
PUBLISHED: 2001, SOURCE: 12th International Conference on Ion Beam Modification of Materials (IBMM2000) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 175
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
Page 53 of 60. Total results: 597.

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