Elvira Maria Correia Fortunato


AuthID: R-000-4M5

Confirmed Publications: 950



421
TITLE: Characterization of mesoporous ZnO:SiO2 films obtained by the sol-gel method  Full Text
AUTHORS: Martins, RMS ; Musat, V; Muecklich, A; Franco, N; Fortunato, E ;
PUBLISHED: 2010, SOURCE: THIN SOLID FILMS, VOLUME: 518, ISSUE: 23
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
422
TITLE: Characterization of SnO2:F thin films deposited by an economic spray pyrolysis technique  Full Text
AUTHORS: Nafiseh Memarian; Seyed Mohammad Rozati; Elangovan Elamurugu; Elvira Fortunato ;
PUBLISHED: 2010, SOURCE: Spring Meeting of the European-Materials-Research-Society (E-MRS)/Symposium F on Advances in Transparent Electronics-From Materials to Devices in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 9, VOLUME: 7, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | CIÊNCIAVITAE
423
TITLE: Erratum: “Thin-film transistors based on p-type Cu[sub 2]O thin films produced at room temperature” [Appl. Phys. Lett. 96, 192102 (2010)]  Full Text
AUTHORS: Elvira Fortunato ; Vitor Figueiredo; Pedro Barquinha; Elangovan Elamurugu; Raquel Barros; Gonçalo Gonçalves; Sang-Hee Ko Park; Chi-Sun Hwang; Rodrigo Martins;
PUBLISHED: 2010, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 96, ISSUE: 23
INDEXED IN: CrossRef
IN MY: ORCID | CIÊNCIAVITAE
424
TITLE: Floating gate memory paper transistor
AUTHORS: Martins, R ; Pereira, L ; Barquinha, P ; Correia, N; Goncalves, G; Ferreira, I ; Dias, C ; Fortunato, E ;
PUBLISHED: 2010, SOURCE: Conference on Oxide-based Materials and Devices in OXIDE-BASED MATERIALS AND DEVICES, VOLUME: 7603
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
425
TITLE: Gelatin in electrochromic devices  Full Text
AUTHORS: Silva, MM ; Barbosa, PC ; Rodrigues, LC ; Goncalves, A; Costa, C; Fortunato, E ;
PUBLISHED: 2010, SOURCE: 2nd International Conference on Functional Materials and Devices in OPTICAL MATERIALS, VOLUME: 32, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef: 43
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
426
TITLE: High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
AUTHORS: Goncalves, G; Barquinha, P; Pereira, L ; Franco, N; Alves, E ; Martins, R ; Fortunato, E ;
PUBLISHED: 2010, SOURCE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 13, ISSUE: 1
INDEXED IN: WOS
IN MY: ResearcherID
427
TITLE: High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
AUTHORS: Gonçalves, G; Barquinha, P; Pereira, L ; Franco, N; Alves, E ; Martins, R; Fortunato, E ;
PUBLISHED: 2010, SOURCE: Electrochemical and Solid-State Letters - Electrochem. Solid-State Lett., VOLUME: 13, ISSUE: 1
INDEXED IN: CrossRef
IN MY: ORCID | CIÊNCIAVITAE
428
TITLE: Influence of Deposition Pressure on N-doped ZnO Films by RF Magnetron Sputtering
AUTHORS: Jinzhong Z Wang; Elangovan Elamurugu; Nuno Franco; Eduardo Alves ; Ana M B Botelho do Rego ; Goncalo Goncalves; Rodrigo Martins ; Elvira Fortunato ;
PUBLISHED: 2010, SOURCE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
429
TITLE: Influence of oxygen partial pressure on properties of N-doped ZnO films deposited by magnetron sputtering  Full Text
AUTHORS: Jin-zhong WANG; ElANGOVAN, E; FRANCO, N; ALVESE, A; REGO, A; MARTINS, R; FORTUNATO, E ;
PUBLISHED: 2010, SOURCE: Transactions of Nonferrous Metals Society of China, VOLUME: 20, ISSUE: 12
INDEXED IN: CrossRef
IN MY: ORCID | CIÊNCIAVITAE
430
TITLE: Influence of oxygen partial pressure on properties of N-doped ZnO films deposited by magnetron sputtering  Full Text
AUTHORS: Wang, JZ; Elangovan, E; Franco, N; Alvese, A; Rego, A ; Martins, R ; Fortunato, E ;
PUBLISHED: 2010, SOURCE: TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, VOLUME: 20, ISSUE: 12
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
Page 43 of 95. Total results: 950.

footer slogan

Useful Links

Get Help

© 2025 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service