651
TITLE: Characterization of polymorphous silicon thin film and solar cells
AUTHORS: Zhang, S; Xu, Y; Liao, X; Martins, R; Fortunato, E ; Hu, Z; Kong, G;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: WOS CrossRef: 1
652
TITLE: Characterization of polymorphous silicon thin film and solar cells
AUTHORS: Zhang, S; Xu, Y; Liao, X; Martins, R; Fortunate, E ; Zeng, X; Hu, Z; Kong, G;
PUBLISHED: 2004, SOURCE: Advanced Materials Forum II: Proceedings of the II International Materials Symposium: Materials 2003 and XI Encontro da Sociedade Portugesa de Materials, 2003 ATERIAIS in Materials Science Forum, VOLUME: 455-456
INDEXED IN: Scopus
653
TITLE: Characterization of silicon carbide thin films prepared by VHF-PECVD technology  Full Text
AUTHORS: Zhang, S; Raniero, L; Fortunato, E ; Pereira, L ; Martins, N; Canhola, P; Ferreira, I ; Nedev, N; Aguas, H ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus WOS CrossRef
654
TITLE: Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques  Full Text
AUTHORS: Raniero, L; Pereira, L ; Zhang, SB; Ferreira, I ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338
INDEXED IN: WOS
655
TITLE: Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques  Full Text
AUTHORS: Raniero, L; Pereira, L ; Zhang, S; Ferreira, I ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 338-340, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus CrossRef
656
TITLE: Composition, structure and optical characteristics of polymorphous silicon films deposited by PECVD at 27.12 MHz
AUTHORS: Martins, R ; Aguas, H ; Ferreira, I ; Fortunato, E ; Raniero, L; Cabarrocas, PRI;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS CrossRef: 1
657
TITLE: Detection limits of a nip a-Si:H linear array position sensitive detector
AUTHORS: Martins, R ; Costa, D; Aguas, H ; Soares, F; Marques, A; Ferreira, I ; Borges, P; Fortunato, E ;
PUBLISHED: 2004, SOURCE: Amorphous and Nanocrystalline Silicon Science and Technology - 2004 in Materials Research Society Symposium Proceedings, VOLUME: 808
INDEXED IN: Scopus
658
TITLE: Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes  Full Text
AUTHORS: Aguas, H ; Pereira, L ; Ferreira, I ; Ramos, AR ; Viana, AS ; Andreu, J; Vilarinho, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus WOS
659
TITLE: Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si:H MIS photodiodes  Full Text
AUTHORS: Águas, H; Pereira, L ; Ferreira, I; A.R Ramos; A.S Viana; Andreu, J; Vilarinho, P ; Fortunato, E ; Martins, R;
PUBLISHED: 2004, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 338-340
INDEXED IN: CrossRef: 2
660
TITLE: Effect of annealing on gold rectifying contacts in amorphous silicon
AUTHORS: Aguas, H ; Pereira, L ; Ferreira, I ; Ramos, AR ; Viana, AS ; Andreu, J; Vilarinho, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
Page 66 of 95. Total results: 950.