321
TITLE: The effect of the flow of silane on the properties of a-Si:H deposited by concentric-electrode radio frequency glow-discharge  Full Text
AUTHORS: Conde, JP ; Chan, KK; Blum, JM; Arienzo, M;
PUBLISHED: 1992, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 71, ISSUE: 8
INDEXED IN: CrossRef
322
TITLE: Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias  Full Text
AUTHORS: Roca i Cabarrocas, P; Morin, P; Chu, V; Conde, JP ; Liu, JZ; Park, HR; Wagner, S;
PUBLISHED: 1991, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 69, ISSUE: 5
INDEXED IN: CrossRef
323
TITLE: OPTOELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED UNDER NEGATIVE SUBSTRATE BIAS  Full Text
AUTHORS: CABARROCAS, PRI; MORIN, P; CHU, V; CONDE, JP ; LIU, JZ; PARK, HR; WAGNER, S;
PUBLISHED: 1991, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 69, ISSUE: 5
INDEXED IN: Scopus WOS
324
TITLE: Ambipolar diffusion length in a-Si:H(F) and a-Si,Ge:H,F measured with the steady-state photocarrier grating technique  Full Text
AUTHORS: Liu, JZ; Li, X; Roca i Cabarrocas, P; Conde, JP ; Maruyama, A; Park, H; Wagner, S; Delahoy, AE;
PUBLISHED: 1990, SOURCE: Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) in Conference Record of the IEEE Photovoltaic Specialists Conference, VOLUME: 2
INDEXED IN: Scopus
325
TITLE: A-SI-H,F-REVERSIBLE-A-SI,GE-H,F GRADED-BANDGAP STRUCTURES
AUTHORS: CONDE, JP ; SHEN, DS; CHU, V; WAGNER, S;
PUBLISHED: 1989, SOURCE: INTERNATIONAL TOPICAL CONF ON HYDROGENATED AMORPHOUS SILICON DEVICES AND TECHNOLOGY in IEEE TRANSACTIONS ON ELECTRON DEVICES, VOLUME: 36, ISSUE: 12
INDEXED IN: Scopus WOS
326
TITLE: BREAKING THE ISOTROPY OF AMORPHOUS SILICON-GERMANIUM ALLOYS - GRADED-BANDGAP AND SAWTOOTH SUPERLATTICE STRUCTURES  Full Text
AUTHORS: CONDE, JP ; CHU, V; WAGNER, S;
PUBLISHED: 1989, SOURCE: 13TH INTERNATIONAL CONF ON AMORPHOUS AND LIQUID SEMICONDUCTORS in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 114, ISSUE: Pt2
INDEXED IN: Scopus WOS
327
TITLE: ELECTRON-TRANSPORT IN A-SI-H,F/A-SI,GE-H,F SUPERLATTICES  Full Text
AUTHORS: CONDE, JP ; SHEN, DS; CHU, V; WAGNER, S;
PUBLISHED: 1989, SOURCE: SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 6, ISSUE: 1
INDEXED IN: Scopus WOS
328
TITLE: Parallel and Perpendicular Transport in a-Si:H,F/a-Si,Ge:H,F Multilayers
AUTHORS: Conde, JP ; Wagner, S;
PUBLISHED: 1989, SOURCE: Amorphous Silicon and Related Materials
INDEXED IN: CrossRef
329
TITLE: Photocurrent collection in a Schottky barrier on an amorphous silicon-germanium alloy structure with 1.23 eV optical gap  Full Text
AUTHORS: Chu, V; Conde, JP ; Shen, DS; Wagner, S;
PUBLISHED: 1989, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 55, ISSUE: 3
INDEXED IN: CrossRef
330
TITLE: PHOTOCURRENT COLLECTION IN A SCHOTTKY-BARRIER ON AN AMORPHOUS SILICON-GERMANIUM ALLOY STRUCTURE WITH 1.23 EV OPTICAL GAP  Full Text
AUTHORS: CHU, V; CONDE, JP ; SHEN, DS; WAGNER, S;
PUBLISHED: 1989, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 55, ISSUE: 3
INDEXED IN: Scopus WOS
Page 33 of 35. Total results: 346.