101
TITLE: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K ; Wendler, E; Magalhães, S; Alves, E ; Carvalho, D; Ben, T; Morales, FM; García, R; O’Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: Nanotechnology, VOLUME: 26, ISSUE: 42
INDEXED IN: CrossRef
102
TITLE: Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents  Full Text
AUTHORS: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E ; Araujo, JP ; Monteiro, T ; Lorenz, K ;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 7
103
TITLE: Indirect excitation of Eu3+ in GaN codoped with Mg and Eu  Full Text
AUTHORS: Yamaga, M; Watanabe, H; Kurahashi, M; O'Donnell, KP; Lorenz, K ; Bockowski, M;
PUBLISHED: 2015, SOURCE: 6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA) in 6TH INTERNATIONAL CONFERENCE ON OPTICAL, OPTOELECTRONIC AND PHOTONIC MATERIALS AND APPLICATIONS (ICOOPMA) 2014, VOLUME: 619, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
104
TITLE: Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering
AUTHORS: Moreno Barrado, A; Gago, R; Redondo Cubero, A; Vazquez, L; Munoz Garcia, J; Cuerno, R; Lorenz, K ; Castro, M;
PUBLISHED: 2015, SOURCE: EPL, VOLUME: 109, ISSUE: 4
INDEXED IN: Scopus WOS
105
TITLE: Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering
AUTHORS: Moreno-Barrado, A; Gago, R; Redondo-Cubero, A; Vázquez, L; Muñoz-García, J; Cuerno, R; Lorenz, K ; Castro, M;
PUBLISHED: 2015, SOURCE: EPL - EPL (Europhysics Letters), VOLUME: 109, ISSUE: 4
INDEXED IN: CrossRef
106
TITLE: Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen  Full Text
AUTHORS: Marco A Sousa; Teresa C Esteves; Nabiha Ben Sedrine; Joana Rodrigues; Marcio B Lourenco; Andres Redondo Cubero; Eduardo Alves ; Kevin P O'Donnell; Michal Bockowski; Christian Wetzel; Maria R Correia; Katharina Lorenz ; Teresa Monteiro ;
PUBLISHED: 2015, SOURCE: SCIENTIFIC REPORTS, VOLUME: 5
INDEXED IN: Scopus WOS CrossRef: 13
107
TITLE: Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure  Full Text
AUTHORS: Ben Sedrine, N; Esteves, TC; Rodrigues, J; Rino, L; Correia, MR; Sequeira, MC; Neves, AJ; Alves, E ; Bockowski, M; Edwards, PR; O'Donnell, KP; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2015, SOURCE: SCIENTIFIC REPORTS, VOLUME: 5
INDEXED IN: Scopus WOS CrossRef: 9
108
TITLE: Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs
AUTHORS: Carvalho, D; Morales, FM; Ben, T; Garcia, R; Redondo Cubero, A; Alves, E ; Lorenz, K ; Edwards, PR; O'Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: MICROSCOPY AND MICROANALYSIS, VOLUME: 21, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
109
TITLE: Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission  Full Text
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz ;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
110
TITLE: Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires
AUTHORS: Rodrigues, J; Leitao, MF; Carreira, JFC; Ben Sedrine, N; Santos, NF; Felizardo, M ; Auzelle, T; Daudin, B; Alves, E ; Neves, AJ; Correia, MR; Costa, FM; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 119, ISSUE: 31
INDEXED IN: Scopus WOS CrossRef: 6
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