Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 314



101
TITLE: Effect of AlN content on the lattice site location of terbium ions in AlxGa1-xN compounds  Full Text
AUTHORS: Fialho, M; Rodrigues, J; Magalhaes, S; Correia, MR; Monteiro, T ; Lorenz, K ; Alves, E ;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ORCID | CIÊNCIAVITAE
102
TITLE: Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films  Full Text
AUTHORS: Flemban, TH; Sequeira, MC; Zhang, Z; Venkatesh, S; Alves, E ; Lorenz, K ; Roqan, IS;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 119, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | CIÊNCIAVITAE
103
TITLE: Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium  Full Text
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef: 10
IN MY: ORCID | CIÊNCIAVITAE
104
TITLE: Ion-beam induced effects in multi-layered semiconductor systems
AUTHORS: Wendler, E; Sobolev, NA; Redondo Cubero, A; Lorenz, K ;
PUBLISHED: 2016, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 253, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID | CIÊNCIAVITAE
105
TITLE: Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E ; Brunner, F; Weyers, M; Lorenz, K ;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
INDEXED IN: Scopus WOS CrossRef: 16
IN MY: ORCID | CIÊNCIAVITAE
106
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N  Full Text
AUTHORS: Magalhaes, S; Fialho, M; Peres, M; Lorenz, K ; Alves, E ;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 13
INDEXED IN: WOS
IN MY: ORCID | CIÊNCIAVITAE
107
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N
AUTHORS: Magalha∼es, S; Fialho, M; Peres, M; Lorenz, K ; Alves, E ;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 49, ISSUE: 13
INDEXED IN: Scopus
IN MY: ORCID | CIÊNCIAVITAE
108
TITLE: Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells
AUTHORS: Lorenz, K ; Redondo Cubero, A; Lourenco, MB; Sequeira, MC; Peres, M; Freitas, A; Alves, LC; Alves, E ; Leitao, MP; Rodrigues, J; Ben Sedrine, N; Correia, MR; Monteiro, T ;
PUBLISHED: 2016, SOURCE: Conference on Gallium Nitride Materials and Devices XI in GALLIUM NITRIDE MATERIALS AND DEVICES XI, VOLUME: 9748
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID | CIÊNCIAVITAE
109
TITLE: Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si (100): local correlation between the morphology and metal content
AUTHORS: Redondo Cubero, A; Galiana, B; Lorenz, K ; Palomares, FJ; Bahena, D; Ballesteros, C; Hernandez Calderon, I; Vazquez, L;
PUBLISHED: 2016, SOURCE: NANOTECHNOLOGY, VOLUME: 27, ISSUE: 44
INDEXED IN: Scopus WOS CrossRef: 12
IN MY: ORCID | CIÊNCIAVITAE
110
TITLE: Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers  Full Text
AUTHORS: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K ; Alves, E ; Monteiro, T ;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID | CIÊNCIAVITAE
Page 11 of 32. Total results: 314.

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