121
TITLE: Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs
AUTHORS: Carvalho, D; Morales, FM; Ben, T; Garcia, R; Redondo Cubero, A; Alves, E ; Lorenz, K ; Edwards, PR; O'Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: MICROSCOPY AND MICROANALYSIS, VOLUME: 21, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
122
TITLE: Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission  Full Text
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz ;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
123
TITLE: Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires
AUTHORS: Rodrigues, J; Leitao, MF; Carreira, JFC; Ben Sedrine, N; Santos, NF; Felizardo, M ; Auzelle, T; Daudin, B; Alves, E ; Neves, AJ; Correia, MR; Costa, FM; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2015, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 119, ISSUE: 31
INDEXED IN: Scopus WOS CrossRef: 6
124
TITLE: Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD  Full Text
AUTHORS: Smith, MD; Taylor, E; Sadler, TC; Zubialevich, VZ; Lorenz, K ; Li, HN; O'Connell, J; Alves, E ; Holmes, JD; Martin, RW; Parbrook, PJ;
PUBLISHED: 2014, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 2, ISSUE: 29
INDEXED IN: Scopus WOS CrossRef
125
TITLE: Doping of Ga2O3 bulk crystals and NWs by ion implantation
AUTHORS: Lorenz, K ; Peres, M; Felizardo, M ; Correia, JG ; Alves, LC; Alves, E ; Lopez, I; Nogales, E; Mendez, B; Piqueras, J; Barbosa, MB; Araujo, JP ; Goncalves, JN; Rodrigues, J; Rino, L; Monteiro, T ; Villora, EG; Shimamura, K;
PUBLISHED: 2014, SOURCE: Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West in OXIDE-BASED MATERIALS AND DEVICES V, VOLUME: 8987
INDEXED IN: Scopus WOS CrossRef: 15
126
TITLE: Errata: Lattice location of Hf and its interaction with other impurities in LiNbO3: a review
AUTHORS: José G Marques ; Katharina Lorenz ;
PUBLISHED: 2014, SOURCE: Optical Engineering - Opt. Eng, VOLUME: 53, ISSUE: 6
INDEXED IN: CrossRef
128
TITLE: Europium-doped GaN(Mg): beyond the limits of the light-emitting diode. Europium-doped GaN(Mg): beyond the limits of the light-emitting diode  Full Text
AUTHORS: O'Donnell, KP; Edwards, PR; Kappers, MJ; Lorenz, K ; Alves, E; Bockowski, M;
PUBLISHED: 2014, SOURCE: 10th International Conference on Nitride Semiconductors (ICNS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, VOLUME: 11, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
129
TITLE: Functional nanowires: Synthesis, characterization and applications
AUTHORS: Bianchi Méndez; Katharina Lorenz ; Beatrice Fraboni; Oliver Ambacher;
PUBLISHED: 2014, SOURCE: Physica Status Solidi (C) Current Topics in Solid State Physics, VOLUME: 11, ISSUE: 2
INDEXED IN: Scopus CrossRef
130
TITLE: GaN:Pr3+ nanostructures for red solid state light emission
AUTHORS: Rodrigues, J; Ben Sedrine, N; Felizardo, M ; Soares, MJ; Alves, E ; Neves, AJ; Fellmann, V; Tourbot, G; Auzelle, T; Daudin, B; Bockowski, M; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2014, SOURCE: RSC ADVANCES, VOLUME: 4, ISSUE: 108
INDEXED IN: Scopus WOS CrossRef: 2
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