Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 298



141
TITLE: On the origin of strain relaxation in epitaxial CdZnO layers
AUTHORS: Redondo-Cubero, A; Rodrigues, J; Brandt, M; Schäfer, P; Henneberger, F; Correia, MR; Monteiro, T ; Alves, E ; Lorenz, K ;
PUBLISHED: 2013, SOURCE: Oxide-based Materials and Devices IV
INDEXED IN: CrossRef
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142
TITLE: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures  Full Text
AUTHORS: Redondo Cubero, A; Lorenz, K ; Wendler, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: NANOTECHNOLOGY, VOLUME: 24, ISSUE: 50
INDEXED IN: Scopus WOS
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143
TITLE: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K ; Wendler, E; Carvalho, D; Ben, T; Morales, FM; García, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: Nanotechnology, VOLUME: 24, ISSUE: 50
INDEXED IN: CrossRef
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144
TITLE: Structural and luminescence properties of Eu and Er implanted Bi2O3 nanowires for optoelectronic applications  Full Text
AUTHORS: Maria Vila; Carlos Diaz Guerra; Katharina Lorenz ; Javier Piqueras; Eduardo Alves ; Silvia Nappini; Elena Magnano;
PUBLISHED: 2013, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 1, ISSUE: 47
INDEXED IN: Scopus WOS CrossRef
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145
TITLE: Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments  Full Text
AUTHORS: López, I; Lorenz, K ; Nogales, E; Méndez, B; Piqueras, J; Alves, E ; García, JA;
PUBLISHED: 2013, SOURCE: J Mater Sci - Journal of Materials Science, VOLUME: 49, ISSUE: 3
INDEXED IN: CrossRef
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146
TITLE: Temperature-Dependent Hysteresis of the Emission Spectrum of Eu-implanted, Mg-doped HVPE GaN  Full Text
AUTHORS: O'Donnell, KP; Martin, RW; Edwards, PR; Lorenz, K ; Alves, E; Bockowski, M;
PUBLISHED: 2013, SOURCE: 31st International Conference on the Physics of Semiconductors (ICPS) in PHYSICS OF SEMICONDUCTORS, VOLUME: 1566
INDEXED IN: Scopus WOS CrossRef
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147
TITLE: The influence of photon excitation and proton irradiation on the luminescence properties of yttria stabilized zirconia doped with praseodymium ions  Full Text
AUTHORS: Soares, MRN; Soares, MJ ; Alves, LC; Alves, E ; Lorenz, K ; Costa, FM ; Monteiro, T ;
PUBLISHED: 2013, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 306
INDEXED IN: Scopus WOS CrossRef: 1
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148
TITLE: Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires  Full Text
AUTHORS: Rodrigues, J; Miranda, SMC; Fernandes, AJS; Nogales, E; Alves, LC; Alves, E ; Tourbot, G; Auzelle, T; Daudin, B; Mendez, B; Trindade, T ; Lorenz, K ; Costa, FM ; Monteiro, T ;
PUBLISHED: 2013, SOURCE: E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4, VOLUME: 10, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef: 6
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149
TITLE: AlN content influence on the properties of AlxGa1-xN doped with Pr ions  Full Text
AUTHORS: Fialho, M; Magalhaes, S; Alves, LC ; Marques, C; Maalej, R; Monteiro, T ; Lorenz, K ; Alves, E ;
PUBLISHED: 2012, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
150
TITLE: Band gap engineering approaches to increase InGaN/GaN LED efficiency  Full Text
AUTHORS: Maur, MAD; Lorenz, K ; Di Carlo, A;
PUBLISHED: 2012, SOURCE: 11th International Conference on Numerical Simulation of Optoelectronic Devices in Optical and Quantum Electronics (NUSOD) in OPTICAL AND QUANTUM ELECTRONICS, VOLUME: 44, ISSUE: 3-5
INDEXED IN: Scopus WOS CrossRef
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Page 15 of 30. Total results: 298.

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