161
TITLE: Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers
AUTHORS: Redondo Cubero, A; Brandt, M; Henneberger, F; Alves, E ; Lorenz, K ;
PUBLISHED: 2012, SOURCE: Conference on Oxide-Based Materials and Devices III in OXIDE-BASED MATERIALS AND DEVICES III, VOLUME: 8263
INDEXED IN: Scopus WOS
162
TITLE: Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers
AUTHORS: Redondo-Cubero, A; Brandt, M; Henneberger, F; Alves, E ; Lorenz, K ;
PUBLISHED: 2012, SOURCE: Oxide-based Materials and Devices III
INDEXED IN: CrossRef
163
TITLE: Ion implantation of Cd and Ag into AlN and GaN  Full Text
AUTHORS: Miranda, SMC; Kessler, P; Correia, JG ; Vianden, R; Johnston, K; Alves, E ; Lorenz, K ;
PUBLISHED: 2012, SOURCE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
164
TITLE: It's not easy being green: Strategies for all-nitrides, all-colour solid state lighting  Full Text
AUTHORS: O'Donnell, KP; Auf der Maur, M; Di Carlo, A; Lorenz, K ; the SORBET consortium, ;
PUBLISHED: 2012, SOURCE: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, VOLUME: 6, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
165
TITLE: Mechanisms of damage formation in Eu-implanted AlN  Full Text
AUTHORS: Leclerc, S; Lacroix, B; Declemy, A; Lorenz, K ; Ruterana, P;
PUBLISHED: 2012, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 112, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef
166
TITLE: Optical doping of AlxGa1-xN compounds by Ion Implantation of Tm ions  Full Text
AUTHORS: Fialho, M; Lorenz, K ; Magalhaes, S; Redondo Cubero, A; Rodrigues, J; Santos, NF; Monteiro, T ; Alves, E ;
PUBLISHED: 2012, SOURCE: 19th International Conference on Ion Implantation Technology (IIT) in ION IMPLANTATION TECHNOLOGY 2012, VOLUME: 1496
INDEXED IN: Scopus WOS CrossRef: 3
167
TITLE: Rare earth co-doping nitride layers for visible light  Full Text
AUTHORS: Rodrigues, J; Miranda, SMC; Santos, NF; Neves, AJ ; Alves, E ; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2012, SOURCE: MATERIALS CHEMISTRY AND PHYSICS, VOLUME: 134, ISSUE: 2-3
INDEXED IN: Scopus WOS CrossRef Handle
IN MY: ORCID
168
TITLE: Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents  Full Text
AUTHORS: Redondo-Cubero, A; Hierro, A; J.-M Chauveau; Lorenz, K ; Tabares, G; Franco, N; Alves, E ; Muñoz, E;
PUBLISHED: 2012, SOURCE: CrystEngComm, VOLUME: 14, ISSUE: 5
INDEXED IN: CrossRef
169
TITLE: Single phase alpha-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
AUTHORS: Redondo Cubero, A ; Hierro, A; M Chauveau; Lorenz, K ; Tabares, G; Franco, N; Alves, E ; Munoz, E;
PUBLISHED: 2012, SOURCE: CRYSTENGCOMM, VOLUME: 14, ISSUE: 5
INDEXED IN: Scopus WOS
170
TITLE: Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN  Full Text
AUTHORS: Darakchieva, V; Lorenz, K ; Y Xie; Alves, E ; Schaff, WJ; Yamaguchi, T; Nanishi, Y; Ruffenach, S; Moret, M; Briot, O;
PUBLISHED: 2012, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 209, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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