ProfileOfResearchers

Handle

IN MY:

ORCID |

182

TITLE: Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents Full Text
AUTHORS: Redondo-Cubero, A; Hierro, A; J.-M Chauveau; Lorenz, K ; Tabares, G; Franco, N; Alves, E ; Muñoz, E;
PUBLISHED: 2012, SOURCE: CrystEngComm, VOLUME: 14, ISSUE: 5

INDEXED IN:

IN MY:

ORCID |

183

TITLE: Single phase alpha-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
AUTHORS: Redondo Cubero, A ; Hierro, A; M Chauveau; Lorenz, K ; Tabares, G; Franco, N; Alves, E ; Munoz, E;
PUBLISHED: 2012, SOURCE: CRYSTENGCOMM, VOLUME: 14, ISSUE: 5

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

184

TITLE: Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN Full Text
AUTHORS: Darakchieva, V; Lorenz, K ; Y Xie; Alves, E ; Schaff, WJ; Yamaguchi, T; Nanishi, Y; Ruffenach, S; Moret, M; Briot, O;
PUBLISHED: 2012, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 209, ISSUE: 1

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

185

TITLE: <title>Radiation damage formation and annealing in GaN and ZnO</title>
AUTHORS: Lorenz, K ; Peres, M; Franco, N; Marques, JG ; Miranda, SMC; Magalhães, S; Monteiro, T ; Wesch, W; Alves, E ; Wendler, E;
PUBLISHED: 2011, SOURCE: Oxide-based Materials and Devices II

INDEXED IN:

CrossRef: 30

IN MY:

ORCID |

186

TITLE: A Double Scattering Analytical Model For Elastic Recoil Detection Analysis Full Text
AUTHORS: Barradas, NP ; Lorenz, K ; Darakchieva, V; Alves, E ; Floyd D McDaniel; Barney L Doyle;
PUBLISHED: 2011, SOURCE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

187

TITLE: A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature Full Text
AUTHORS: Ruterana, P; Lacroix, B; Lorenz, K ;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 1

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |

188

TITLE: Band gap engineering approaches to increase InGaN/GaN LED efficiency
AUTHORS: Auf Der Maur, M; Di Carlo, A; Lorenz, K ;
PUBLISHED: 2011, SOURCE: 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011 in Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

INDEXED IN:

Scopus

IN MY:

ORCID |

189

TITLE: Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures Full Text
AUTHORS: Nogales, E; Hidalgo, P; Lorenz, K ; Mendez, B; Piqueras, J; Alves, E ;
PUBLISHED: 2011, SOURCE: NANOTECHNOLOGY, VOLUME: 22, ISSUE: 28

INDEXED IN:

Scopus

WOS

IN MY:

ORCID |