ProfileOfResearchers

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202

TITLE: Identification of the prime optical center in GaN:Eu3+
AUTHORS: Roqan, IS; O'Donnell, KP; Martin, RW; Edwards, PR; Song, SF; Vantomme, A; Lorenz, K ; Alves, E ; Bockowski, M;
PUBLISHED: 2010, SOURCE: PHYSICAL REVIEW B, VOLUME: 81, ISSUE: 8

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203

TITLE: Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers Full Text
AUTHORS: Das, A; Magalhaes, S; Kotsar, Y; Kandaswamy, PK; Gayral, B; Lorenz, K ; Alves, E ; Ruterana, P; Monroy, E;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 18

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204

TITLE: Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots Full Text
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7

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205

TITLE: Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy Full Text
AUTHORS: Lorenz, K ; Alves, E ; Roqan, IS; O'Donnell, KP; Nishikawa, A; Fujiwara, Y; Bockowski, M;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 97, ISSUE: 11

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206

TITLE: Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Franco, N; Lorenz, K ; Alves, E ; Damilano, B; Massies, J; Dussaigne, A; Grandjean, N;
PUBLISHED: 2010, SOURCE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, ISSUE: 4

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207

TITLE: Optical doping and damage formation in AlN by Eu implantation Full Text
AUTHORS: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, ISSUE: 2

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208

TITLE: RE Implantation and Annealing of III-Nitrides
AUTHORS: Katharina Lorenz ; Eduardo Alves ; Florence Gloux; Pierre Ruterana;
PUBLISHED: 2010, SOURCE: RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS, VOLUME: 124

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209

TITLE: The Characterization of N Interstitials and Dangling Bond Point Defects on Ion-Implanted GaN Nanowires Studied by Photoluminescence and X-Ray Absorption Spectroscopy. Rapid Communications of the American Ceramic Society Full Text
AUTHORS: Kuo Hao Lee; Jau Wern Chiou; Jin Ming Chen; Jyh Fu Lee; Alain Braud; Katharina Lorenz ; Eduardo Alves ; In Gann Chen;
PUBLISHED: 2010, SOURCE: JOURNAL OF THE AMERICAN CERAMIC SOCIETY, VOLUME: 93, ISSUE: 11

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210

TITLE: Thin film depth profiling using simultaneous particle backscattering and nuclear resonance profiling Full Text
AUTHORS: Barradas, NP ; Mateus, R ; Fonseca, M. ; Miguel A. Reis ; Lorenz, K ; Vickridge, I;
PUBLISHED: 2010, SOURCE: 19th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, ISSUE: 11-12

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