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201

TITLE: The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN Full Text
AUTHORS: O'Donnell, KP; Roqan, IS; Ke Wang; Lorenz, K ; Alves, E ; Bockowski, M;
PUBLISHED: 2011, SOURCE: Spring Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 33, ISSUE: 7

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202

TITLE: The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN Full Text
AUTHORS: K.P O’Donnell; I.S Roqan; Ke Wang; Lorenz, K ; Alves, E ; Boćkowski, M;
PUBLISHED: 2011, SOURCE: Optical Materials, VOLUME: 33, ISSUE: 7

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203

TITLE: The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD Full Text
AUTHORS: Peres, M; Magalhaes, S; Rodrigues, J; Soares, MJ ; Fellmann, V; Neves, AJ ; Alves, E ; Daudin, B; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2011, SOURCE: Spring Meeting of the European-Materials-Research-Society (E-MRS) in OPTICAL MATERIALS, VOLUME: 33, ISSUE: 7

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204

TITLE: Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations Full Text
AUTHORS: Darakchieva, V; Lorenz, K ; Y Xie; Alves, E ; Hsiao, CL; Chen, LC; Tu, LW; Schaff, WJ; Yamaguchi, T; Nanishi, Y;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 110, ISSUE: 6

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205

TITLE: Zeeman splittings of the 5D 0- 7F 2 transitions of Eu 3+ ions implanted into GaN
AUTHORS: Kachkanov, V; O'Donnell, KP; Rice, C; Wolverson, D; Martin, RW; Lorenz, K ; Alves, E ; Bockowski, M;
PUBLISHED: 2011, SOURCE: 2010 MRS Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1290

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206

TITLE: Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties Full Text
AUTHORS: Lorenz, K ; Magalhaes, S; Franco, N; Barradas, NP ; Darakchieva, V; Alves, E ; Pereira, S ; Correia, MR ; Munnik, F; Martin, RW; O'Donnell, KP; Watson, IM;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7

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207

TITLE: An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices Full Text
AUTHORS: Kessler, P; Lorenz, K ; Miranda, SMC; Correia, JG ; Johnston, K; Vianden, R;
PUBLISHED: 2010, SOURCE: 3rd Joint International Conference on Hyperfine Interactions (HFI) / International Symposium on Nuclear Quadrupole Interactions (NQI) in HYPERFINE INTERACTIONS, VOLUME: 197, ISSUE: 1-3

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208

TITLE: Defect studies and optical activation of Yb doped GaN Full Text
AUTHORS: Lorenz, K ; Alves, E ; Magalhes, S; Peres, M; Monteiro, T ; Kozanecki, A; Valerio, MEG;
PUBLISHED: 2010, SOURCE: 16th International Conference on Defects in Insulating Materials, ICDIM2008 in Journal of Physics: Conference Series, VOLUME: 249, ISSUE: 1

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209