Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 314



211
TITLE: Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures  Full Text
AUTHORS: Magalhaes, S; Lorenz, K ; Franco, N; Barradas, NP ; Alves, E ; Monteiro, T ; Amstatt, B; Fellmann, V; Daudin, B;
PUBLISHED: 2010, SOURCE: 7th International Symposium on Atomic Level Characterizations for New Materials and Devices in SURFACE AND INTERFACE ANALYSIS, VOLUME: 42, ISSUE: 10-11
INDEXED IN: Scopus WOS
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212
TITLE: Effect of annealing on AlN/GaN quantum dot heterostructures: advanced ion beam characterization and X-ray study of low-dimensional structures  Full Text
AUTHORS: Magalhães, S; Lorenz, K ; Franco, N; Barradas, NP; Alves, E ; Monteiro, T ; Amstatt, B; Fellmann, V; Daudin, B;
PUBLISHED: 2010, SOURCE: Surface and Interface Analysis - Surf. Interface Anal., VOLUME: 42, ISSUE: 10-11
INDEXED IN: CrossRef Handle
IN MY: ORCID | CIÊNCIAVITAE
213
TITLE: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation  Full Text
AUTHORS: Magalhaes, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ ; Alves, E ; Monteiro, T ; Lorenz, K ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 108, ISSUE: 8
INDEXED IN: Scopus WOS
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214
TITLE: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation  Full Text
AUTHORS: Magalhães, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ; Alves, E ; Monteiro, T ; Lorenz, K ;
PUBLISHED: 2010, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 108, ISSUE: 8
INDEXED IN: CrossRef: 10
IN MY: ORCID | CIÊNCIAVITAE
215
TITLE: High temperature annealing of Europium implanted AlN  Full Text
AUTHORS: Lorenz, K ; Magalhaes, S; Alves, E ; Peres, M; Monteiro, T ; Neves, AJ ; Bockowski, M;
PUBLISHED: 2010, SOURCE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, ISSUE: 19
INDEXED IN: Scopus WOS CrossRef Handle
IN MY: ORCID | CIÊNCIAVITAE
216
TITLE: Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material  Full Text
AUTHORS: Darakchieva, V; Lorenz, K ; Barradas, NP ; Alves, E ; Monemar, B; Schubert, M; Franco, N; Hsiao, CL; Chen, LC; Schaff, WJ; Tu, LW; Yamaguchi, T; Nanishi, Y;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef
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217
TITLE: Identification of the prime optical center in GaN:Eu3+
AUTHORS: Roqan, IS; O'Donnell, KP; Martin, RW; Edwards, PR; Song, SF; Vantomme, A; Lorenz, K ; Alves, E ; Bockowski, M;
PUBLISHED: 2010, SOURCE: PHYSICAL REVIEW B, VOLUME: 81, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef
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218
TITLE: Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers  Full Text
AUTHORS: Das, A; Magalhaes, S; Kotsar, Y; Kandaswamy, PK; Gayral, B; Lorenz, K ; Alves, E ; Ruterana, P; Monroy, E;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 96, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef
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219
TITLE: Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots  Full Text
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLISHED: 2010, SOURCE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef Handle
IN MY: ORCID | CIÊNCIAVITAE
220
TITLE: Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Roqan, IS; O'Donnell, KP; Nishikawa, A; Fujiwara, Y; Bockowski, M;
PUBLISHED: 2010, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 97, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
Page 22 of 32. Total results: 314.

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