Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 314



221
TITLE: Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice
AUTHORS: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Franco, N; Lorenz, K ; Alves, E ; Damilano, B; Massies, J; Dussaigne, A; Grandjean, N;
PUBLISHED: 2010, SOURCE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef Handle
IN MY: ORCID | CIÊNCIAVITAE
222
TITLE: Optical doping and damage formation in AlN by Eu implantation  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2010, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef: 27
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
223
TITLE: RE Implantation and Annealing of III-Nitrides
AUTHORS: Katharina Lorenz ; Eduardo Alves ; Florence Gloux; Pierre Ruterana;
PUBLISHED: 2010, SOURCE: RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS, VOLUME: 124
INDEXED IN: Scopus WOS CrossRef
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224
TITLE: The Characterization of N Interstitials and Dangling Bond Point Defects on Ion-Implanted GaN Nanowires Studied by Photoluminescence and X-Ray Absorption Spectroscopy. Rapid Communications of the American Ceramic Society  Full Text
AUTHORS: Kuo Hao Lee; Jau Wern Chiou; Jin Ming Chen; Jyh Fu Lee; Alain Braud; Katharina Lorenz ; Eduardo Alves ; In Gann Chen;
PUBLISHED: 2010, SOURCE: JOURNAL OF THE AMERICAN CERAMIC SOCIETY, VOLUME: 93, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
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225
TITLE: Thin film depth profiling using simultaneous particle backscattering and nuclear resonance profiling  Full Text
AUTHORS: Barradas, NP ; Mateus, R ; Fonseca, M. ; Miguel A. Reis ; Lorenz, K ; Vickridge, I;
PUBLISHED: 2010, SOURCE: 19th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, ISSUE: 11-12
INDEXED IN: Scopus WOS CrossRef
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226
TITLE: Total reflectance and Raman studies in AlyInxGa1-x-yN epitaxial layers  Full Text
AUTHORS: Margarida M Bola; Correia, MR ; Pereira, S ; Gonzalez, JC; Lorenz, K ; Alves, E ; Barradas, N ;
PUBLISHED: 2010, SOURCE: Symposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1, VOLUME: 7, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
227
TITLE: Alloy and lattice disorder in Hf implanted  Full Text
AUTHORS: Thomas Geruschke; Katharina Lorenz ; Reiner Vianden;
PUBLISHED: 2009, SOURCE: Physica B: Condensed Matter, VOLUME: 404, ISSUE: 23-24
INDEXED IN: CrossRef
IN MY: ORCID | CIÊNCIAVITAE
228
TITLE: Alloy and lattice disorder in Hf implanted AlxGa1-xN (0 <= x <= 1)  Full Text
AUTHORS: Thomas Geruschke; Katharina Lorenz ; Reiner Vianden;
PUBLISHED: 2009, SOURCE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 23-24
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
229
TITLE: Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures  Full Text
AUTHORS: Redondo Cubero, A ; Lorenz, K ; Gago, R; Franco, N; Fernandez Garrido, S; Smulders, PJM; Munoz, E; Calleja, E; Watson, IM; Alves, E ;
PUBLISHED: 2009, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 95, ISSUE: 5
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
230
TITLE: Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K ; Gago, R; Franco, N; Fernández-Garrido, S; Smulders, PJM; Muñoz, E; Calleja, E; Watson, IM; Alves, E ;
PUBLISHED: 2009, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 95, ISSUE: 5
INDEXED IN: CrossRef
IN MY: ORCID | CIÊNCIAVITAE
Page 23 of 32. Total results: 314.

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