241
TITLE: Radiation damage in ZnO ion implanted at 15 K  Full Text
AUTHORS: Wendler, E; Bilani, O; Gaertner, K; Wesch, W; Hayes, M; Auret, FD; Lorenz, K ; Alves, E ;
PUBLISHED: 2009, SOURCE: 23rd International Conference on Atomic Collisions in Solids in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 267, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef
242
TITLE: Role of impurities and dislocations for the unintentional n-type conductivity in InN  Full Text
AUTHORS: Darakchieva, V; Barradas, NP ; Y Xie; Lorenz, K ; Alves, E ; Schubert, M; Persson, POA; Giuliani, F; Munnik, F; Hsiao, CL; Tu, LW; Schaff, WJ;
PUBLISHED: 2009, SOURCE: 3rd South African Conference on Photonic Materials in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 22
INDEXED IN: Scopus WOS CrossRef
243
TITLE: Stable In-defect complexes in GaN and AlN  Full Text
AUTHORS: Schmitz, J; Niederhausen, J; Penner, J; Lorenz, K ; Alves, E ; Vianden, R;
PUBLISHED: 2009, SOURCE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 23-24
INDEXED IN: Scopus WOS CrossRef
244
TITLE: Structural and optical characterization of Eu-implanted GaN  Full Text
AUTHORS: Lorenz, K ; Barradas, NP ; Alves, E ; Roqan, IS; Nogales, E; Martin, RW; O'Donnell, KP; Gloux, F; Ruterana, P;
PUBLISHED: 2009, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef
245
TITLE: A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation  Full Text
AUTHORS: Florence Gloux; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
246
TITLE: A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 degrees C  Full Text
AUTHORS: Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 146, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
247
TITLE: Defect studies on fast and thermal neutron irradiated GaN  Full Text
AUTHORS: Lorenz, K ; Marques, JG ; Franco, N; Alves, E ; Peres, M; Correia, MR ; Monteiro, T ;
PUBLISHED: 2008, SOURCE: 14th International Conference on Radiation Effects in Insulators (REI-14) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 266, ISSUE: 12-13
INDEXED IN: Scopus WOS CrossRef Handle
248
TITLE: Luminescence spectroscopy of Eu-implanted zincblende GaN  Full Text
AUTHORS: Roqan, IS; O'Donnell, KP; Trager Cowan, C; Hourahine, B; Martin, RW; Lorenz, K ; Alves, E ; As, DJ; Panfilova, M; Watson, IM;
PUBLISHED: 2008, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 245, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
249
TITLE: Mechanisms of AlInN growth by MOVPE: modeling and experimental study  Full Text
AUTHORS: Yakovlev, EV; Lobanova, AV; Talalaev, RA; Watson, IM; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: 7th International Conference on Nitride Semiconductors (ICNS-7) in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, VOLUME: 5, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
250
TITLE: Optical energies of AlInN epilayers  Full Text
AUTHORS: Wang, K; Martin, RW; Amabile, D; Edwards, PR; Hernandez, S; Nogales, E; O'Donnell, KP; Lorenz, K ; Alves, E ; Matias, V; Vantomme, A; Wolverson, D; Watson, IM;
PUBLISHED: 2008, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 103, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef
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