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Katharina Lorenz
AuthID:
R-000-90E
Publications
Confirmed
To Validate
Document Source:
All
Document Type:
All Document Types
Article (236)
Proceedings Paper (42)
Review (6)
Article in Press (6)
Correction (4)
Editorial Material (2)
Erratum (1)
Book Chapter (1)
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Results:
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Confirmed Publications: 298
271
TITLE:
Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation
Full Text
AUTHORS:
Gloux, F
;
Wojtowicz, T
;
Ruterana, P
;
Lorenz, K
;
Alves, E
;
PUBLISHED:
2006
,
SOURCE:
JOURNAL OF APPLIED PHYSICS,
VOLUME:
100,
ISSUE:
7
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
|
CIÊNCIAVITAE
272
TITLE:
UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers
Full Text
AUTHORS:
Pastor, D
; Hernandez, S; Cusco, R; Artus, L;
Martin, RW
; O'Donnell, KP; Briot, O;
Lorenz, K
;
Alves, E
;
PUBLISHED:
2006
,
SOURCE:
Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS
in
SUPERLATTICES AND MICROSTRUCTURES,
VOLUME:
40,
ISSUE:
4-6
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
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|
CIÊNCIAVITAE
273
TITLE:
Damage formation and annealing at low temperatures in ion implanted ZnO
Full Text
AUTHORS:
Lorenz, K
;
Alves, E
;
Wendler, E
; Bilani, O; Wesch, W; Hayes, M;
PUBLISHED:
2005
,
SOURCE:
APPLIED PHYSICS LETTERS,
VOLUME:
87,
ISSUE:
19
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
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|
CIÊNCIAVITAE
274
TITLE:
Selectively excited photoluminescence from Eu-implanted GaN
Full Text
AUTHORS:
Wang, K;
Martin, RW
; O'Donnell, KP; Katchkanov, V; Nogales, E;
Lorenz, K
;
Alves, E
;
Ruffenach, S
; Briot, O;
PUBLISHED:
2005
,
SOURCE:
APPLIED PHYSICS LETTERS,
VOLUME:
87,
ISSUE:
11
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
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CIÊNCIAVITAE
275
TITLE:
The atomic structure of defects formed during doping of GaN with rare earth ions
Full Text
AUTHORS:
Wojtowicz, T
;
Ruterana, P
;
Lorenz, K
;
Wahl, U
;
Alves, E
;
Ruffenach, S
; Halambalakis, G; Briot, O;
PUBLISHED:
2005
,
SOURCE:
Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting
in
E-MRS 2004 Fall Meeting Symposia C and F,
VOLUME:
2,
ISSUE:
3
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
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CIÊNCIAVITAE
276
TITLE:
Amorphisation of GaN during processing with rare earth ion beams
Full Text
AUTHORS:
Lorenz, K
;
Wahl, U
;
Alves, E
;
Wojtowicz, T
;
Ruterana, P
;
Ruffenach, S
; Briot, O;
PUBLISHED:
2004
,
SOURCE:
Meeting of the European-Materials-Research-Society
in
SUPERLATTICES AND MICROSTRUCTURES,
VOLUME:
36,
ISSUE:
4-6
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
|
CIÊNCIAVITAE
277
TITLE:
Anomalous temperature dependence of the EFG in AlN measured with the PAC-probes Hf-181 and In-111
Full Text
AUTHORS:
Lorenz, K
; Vianden, R;
PUBLISHED:
2004
,
SOURCE:
Joint Meeting of the 13th International Conference on Hyperfine Interactions/17th International Symposium on Nuclear Quadrupole Interactions (HFI/NQI 2004)
in
HYPERFINE INTERACTIONS,
VOLUME:
158,
ISSUE:
1-4
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
|
CIÊNCIAVITAE
278
TITLE:
Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy
Full Text
AUTHORS:
Colder, A
; Marie, P;
Wojtowicz, T
;
Ruterana, P
; Eimer, S; Mechin, L;
Lorenz, K
;
Wahl, U
;
Alves, E
; Matias, V; Mamor, M;
PUBLISHED:
2004
,
SOURCE:
Meeting of the European-Materials-Research-Society
in
SUPERLATTICES AND MICROSTRUCTURES,
VOLUME:
36,
ISSUE:
4-6
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
|
CIÊNCIAVITAE
279
TITLE:
Extended X-ray absorption fine structure studies of thulium doped GaN epilayers
Full Text
AUTHORS:
Katchkanov, V; Mosselmans, JFW; Dalmasso, S; O'Donnell, KP; Hernandez, S; Wang, K; Martin, RW; Briot, O; Rousseau, N; Halambalakis, G;
Lorenz, K
;
Alves, E
;
PUBLISHED:
2004
,
SOURCE:
European Materials Research Society 2004, Symposium L. InN
in
Superlattices and Microstructures,
VOLUME:
36,
ISSUE:
4-6
INDEXED IN:
Scopus
CrossRef
IN MY:
ORCID
|
CIÊNCIAVITAE
280
TITLE:
High-temperature annealing and optical activation of Eu-implanted GaN
Full Text
AUTHORS:
Lorenz, K
;
Wahl, U
;
Alves, E
; Dalmasso, S;
Martin, RW
; O'Donnell, KP;
Ruffenach, S
; Briot, O;
PUBLISHED:
2004
,
SOURCE:
APPLIED PHYSICS LETTERS,
VOLUME:
85,
ISSUE:
14
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
|
ResearcherID
|
CIÊNCIAVITAE
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