Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 298



281
TITLE: Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth implanted GaN
AUTHORS: Dalmasso, S; Martin, RW; Edwards, PR; Katchkanov, V; O'Donnell, KP; Lorenz, K ; Alves, E ; Wahl, U ; Pipeleers, B; Matias, V; Vantomme, A; Nakanishi, Y; Wakahara, A; Yoshida, A;
PUBLISHED: 2003, SOURCE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
INDEXED IN: Scopus WOS
IN MY: ORCID | CIÊNCIAVITAE
282
TITLE: High temperature implantation of Tm in GaN
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Dalmasso, S; Martin, RW; O'Donnell, KP;
PUBLISHED: 2003, SOURCE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
INDEXED IN: Scopus WOS CrossRef: 6
IN MY: ORCID | CIÊNCIAVITAE
283
TITLE: Implantation and annealing studies of Tm-implanted GaN  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Wahl, U ; Monteiro, T ; Dalmasso, S; Martin, RW; O'Donnell, KP; Vianden, R;
PUBLISHED: 2003, SOURCE: Meeting of the European-Materials-Research-Society (EMRS) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 105, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef Handle
IN MY: ORCID
284
TITLE: Lattice location and optical activation of rare earth implanted GaN  Full Text
AUTHORS: Wahl, U ; Alves, E ; Lorenz, K ; Correia, JG ; Monteiro, T ; De Vries, B; Vantomme, A; Vianden, R;
PUBLISHED: 2003, SOURCE: Meeting of the European-Materials-Research-Society (EMRS) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 105, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef Handle
IN MY: ORCID
285
TITLE: Processing of rare earth doped GaN with ion beams
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O; Vantomme, A;
PUBLISHED: 2003, SOURCE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
286
TITLE: Defect recovery in AIN and InN after heavy ion implantation  Full Text
AUTHORS: Lorenz, K ; Vianden, R;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
287
TITLE: Gallium nitride epitaxy on (0001) sapphire
AUTHORS: Narayanan V.; Lorenz K. ; Wook Kim; Mahajan S.;
PUBLISHED: 2002, SOURCE: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, VOLUME: 82, ISSUE: 5
INDEXED IN: Scopus CrossRef: 40
IN MY: ORCID | CIÊNCIAVITAE
288
TITLE: Gallium nitride epitaxy on (0001) sapphire  Full Text
AUTHORS: Narayanan V.; Lorenz K. ; Wook Kim; Mahajan S.;
PUBLISHED: 2002, SOURCE: Philosophical Magazine A Physics of Condensed Matter Structure Defects and Mechanical Properties, VOLUME: 82, ISSUE: 5
INDEXED IN: Scopus CrossRef: 4
IN MY: CIÊNCIAVITAE
289
TITLE: Reversible changes in the lattice site structure for In implanted into GaN  Full Text
AUTHORS: Lorenz, K ; Ruske, F; Vianden, R;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
290
TITLE: Annealing behaviour of GaN after implantation with hafnium and indium  Full Text
AUTHORS: Lorenz, K ; Ruske, F; Vianden, R;
PUBLISHED: 2001, SOURCE: Physica Status Solidi (B) Basic Research, VOLUME: 228, ISSUE: 1
INDEXED IN: Scopus CrossRef
Page 29 of 30. Total results: 298.

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