Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 314



301
TITLE: Processing of rare earth doped GaN with ion beams
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O; Vantomme, A;
PUBLISHED: 2003, SOURCE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
INDEXED IN: Scopus WOS
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302
TITLE: Defect recovery in AIN and InN after heavy ion implantation  Full Text
AUTHORS: Lorenz, K ; Vianden, R;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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303
TITLE: Gallium nitride epitaxy on (0001) sapphire
AUTHORS: Narayanan V.; Lorenz K. ; Wook Kim; Mahajan S.;
PUBLISHED: 2002, SOURCE: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, VOLUME: 82, ISSUE: 5
INDEXED IN: Scopus CrossRef: 40
IN MY: ORCID | CIÊNCIAVITAE
304
TITLE: Gallium nitride epitaxy on (0001) sapphire  Full Text
AUTHORS: Narayanan V.; Lorenz K. ; Wook Kim; Mahajan S.;
PUBLISHED: 2002, SOURCE: Philosophical Magazine A Physics of Condensed Matter Structure Defects and Mechanical Properties, VOLUME: 82, ISSUE: 5
INDEXED IN: Scopus CrossRef: 4
IN MY: CIÊNCIAVITAE
305
TITLE: Reversible changes in the lattice site structure for In implanted into GaN  Full Text
AUTHORS: Lorenz, K ; Ruske, F; Vianden, R;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef
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306
TITLE: Annealing behaviour of GaN after implantation with hafnium and indium  Full Text
AUTHORS: Lorenz, K ; Ruske, F; Vianden, R;
PUBLISHED: 2001, SOURCE: Physica Status Solidi (B) Basic Research, VOLUME: 228, ISSUE: 1
INDEXED IN: Scopus CrossRef
307
TITLE: Annealing behaviour of GaN after implantation with hafnium and indium  Full Text
AUTHORS: Lorenz, K ; Ruske, F; Vianden, R;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 228, ISSUE: 1
INDEXED IN: WOS CrossRef
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308
TITLE: Dopants in semiconductors studied by perturbed angular correlation
AUTHORS: Bartels, J; Lorenz, K ; Ruske, F; Tessema, G; Vianden, R;
PUBLISHED: 2001, SOURCE: 36th Zakopane-School-of-Physics International Symposium on Condensed Matter Studies with Nuclear Methods in ACTA PHYSICA POLONICA A, VOLUME: 100, ISSUE: 5
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID | CIÊNCIAVITAE
309
TITLE: Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films
AUTHORS: Wruck, D; Lorenz, K ; Vianden, R; Reinhold, B; Mahnke, HE; Baranowski, JM; Pakula, K; Parthier, L; Henneberger, F;
PUBLISHED: 2001, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 16, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID | CIÊNCIAVITAE
310
TITLE: Optical doping of nitrides by ion implantation  Full Text
AUTHORS: Alves, E ; Lorenz, K ; Vianden, R; Boemare, C; Soares, MJ ; Monteiro, T ;
PUBLISHED: 2001, SOURCE: Workshop on Advanced Materials Produced and Analyzed with Ion Beams in MODERN PHYSICS LETTERS B, VOLUME: 15, ISSUE: 28-29
INDEXED IN: Scopus WOS
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Page 31 of 32. Total results: 314.

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