ProfileOfResearchers

311

TITLE: OPTICAL DOPING OF NITRIDES BY ION IMPLANTATION Full Text
AUTHORS: ALVES, E ; LORENZ, K ; VIANDEN, R; BOEMARE, C; SOARES, MJ; MONTEIRO, T ;
PUBLISHED: 2001, SOURCE: Modern Physics Letters B - Mod. Phys. Lett. B, VOLUME: 15, ISSUE: 28n29

INDEXED IN:

CrossRef: 23

IN MY:

ORCID |

CIÊNCIAVITAE

312

TITLE: Photoluminescence and lattice location of Eu and Pr implanted GaN samples Full Text
AUTHORS: Monteiro, T ; Boemare, C; Soares, MJ ; Ferreira, RAS ; Carlos, LD ; Lorenz, K ; Vianden, R; Alves, E ;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308

INDEXED IN:

Scopus

WOS

CrossRef

Handle

IN MY:

ORCID |

CIÊNCIAVITAE

313

TITLE: Defect trapping and annealing for transition metal implants in group III nitrides
AUTHORS: Lorenz, K ; Vianden, R; Pearton, SJ; Abernathy, CR; Zavada, JM;
PUBLISHED: 2000, SOURCE: MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, VOLUME: 5, ISSUE: 5

INDEXED IN:

Scopus

WOS

CrossRef

IN MY:

ORCID |

ResearcherID |

CIÊNCIAVITAE

314

TITLE: RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates Full Text
AUTHORS: Lorenz, K ; Vianden, R; Birkhahn, R; Steckl, AJ; da Silva, MF; Soares, JC; Alves, E ;
PUBLISHED: 2000, SOURCE: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 161

INDEXED IN:

Scopus

WOS

CrossRef

IN MY:

ORCID |

ResearcherID |

CIÊNCIAVITAE