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TITLE: Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites
AUTHORS: Ben Sedrine, N; Rodrigues, J; Faye, DN; Neves, AJ; Alves, E ; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K ; Correia, MR; Monteiro, T ;
PUBLISHED: 2018, SOURCE: ACS APPLIED NANO MATERIALS, VOLUME: 1, ISSUE: 8

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TITLE: Eu-Mg defects and donor-acceptor pairs in GaN: photodissociation and the excitation transfer problem
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Lorenz, K ; Leach, JH; Bockowski, M;
PUBLISHED: 2018, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 51, ISSUE: 6

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TITLE: GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented beta-Ga2O3 substrate for UV vertical light emitting devices
AUTHORS: Ajia, IA; Yamashita, Y; Lorenz, K ; Muhammed, MM; Spasevski, L; Almalawi, D; Xu, J; Iizuka, K; Morishima, Y; Anjum, DH; Wei, N; Martin, RW; Kuramata, A; Roqan, IS;
PUBLISHED: 2018, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 113, ISSUE: 8

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TITLE: Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):EuA Summary of Recent Results
AUTHORS: Edwards, PR; O'Donnell, KP; Singh, AK; Cameron, D; Lorenz, K ; Yamaga, M; Leach, JH; Kappers, MJ; Bockowski, M;
PUBLISHED: 2018, SOURCE: MATERIALS, VOLUME: 11, ISSUE: 10

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TITLE: In Situ Characterization and Modification of -Ga2O3 Flakes Using an Ion Micro-Probe Full Text
AUTHORS: Peres, M; Alves, LC; Rocha, F; Catarino, N; Cruz, C; Alves, E ; Silva, AG ; Villora, EG; Shimamura, K; Lorenz, K ;
PUBLISHED: 2018, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 215, ISSUE: 19

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TITLE: Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications
AUTHORS: Cardoso, J; Ben Sedrine, N; Alves, A; Martins, MA; Belloeil, M; Daudin, B; Faye, DN; Alves, E ; Lorenz, K ; Neves, AJ; Correia, MR; Monteiro, T ;
PUBLISHED: 2018, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 113, ISSUE: 20

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TITLE: Optical investigations of europium ion implanted in nitride-based diode structures Full Text
AUTHORS: Ben Sedrine, N; Rodrigues, J; Cardoso, J; Faye, DN; Fialho, M; Magalhaes, S; Martins, AF; Neves, AJ; Alves, E ; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K ; Correia, MR; Monteiro, T ;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355

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TITLE: Radiation sensors based on GaN microwires Full Text
AUTHORS: Verheij, D; Peres, M; Cardoso, S ; Alves, LC; Alves, E ; Durand, C; Eymery, J; Lorenz, K ;
PUBLISHED: 2018, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 51, ISSUE: 17

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TITLE: Spatially resolved optical activation of Eu ions by laser irradiation implanted hexagonal MoO3 microrods Full Text
AUTHORS: Almodovar, P; Diaz Guerra, C; Ramirez Castellanos, J; Gonzalez Calbet, JM; Peres, M; Lorenz, K ;
PUBLISHED: 2018, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 113, ISSUE: 3

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TITLE: Spatially resolved optical activation of Eu ions by laser irradiation in implanted hexagonal MoO3 microrods
AUTHORS: Almodóvar, P; Díaz Guerra, C; Ramírez Castellanos, J; González Calbet, JM; Peres, M; Lorenz, K ;
PUBLISHED: 2018, SOURCE: Applied Physics Letters, VOLUME: 113, ISSUE: 3

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