Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 298



81
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates  Full Text
AUTHORS: Magalhães, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T ; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E ; Lorenz, K ;
PUBLISHED: 2017, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 50, ISSUE: 20
INDEXED IN: Scopus CrossRef: 10
IN MY: ORCID | CIÊNCIAVITAE
82
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates  Full Text
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E ; Lorenz, K ;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
INDEXED IN: WOS
IN MY: ORCID | CIÊNCIAVITAE
83
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al 0.15 Ga 0.85 N   Full Text
AUTHORS: Magalhães, S; Fialho, M; Peres, M; Lorenz, K ; Alves, E ;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 49, ISSUE: 13
INDEXED IN: CrossRef
IN MY: ORCID | CIÊNCIAVITAE
84
TITLE: Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers  Full Text
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E ; Neves, AJ; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2016, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 178
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | CIÊNCIAVITAE
85
TITLE: Correction to "Spectroscopic Analysis of Eu 3+ Implanted and Annealed GaN Layers and Nanowires"
AUTHORS: Rodrigues, J; Leitão, MF; Carreira, JFC; Ben Sedrine, N; Santos, NF; Felizardo, M ; Auzelle, T; Daudin, B; Alves, E ; Neves, AJ; Correia, MR; Costa, FM; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2016, SOURCE: Journal of Physical Chemistry C, VOLUME: 120, ISSUE: 12
INDEXED IN: Scopus CrossRef: 3
IN MY: ORCID | CIÊNCIAVITAE
86
TITLE: Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the D-5(0) to F-7(1) transition  Full Text
AUTHORS: O'Donnell, KP; Edwards, PR; Yamaga, M; Lorenz, K ; Kappers, MJ; Bockowski, M;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | CIÊNCIAVITAE
87
TITLE: Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction  Full Text
AUTHORS: Daniel Carvalho; Knut Mueller Caspary; Marco Schowalter; Tim Grieb; Thorsten Mehrtens; Andreas Rosenauer; Teresa Ben; Rafael Garcia; Andres Redondo Cubero; Katharina Lorenz ; Bruno Daudin; Francisco M Morales;
PUBLISHED: 2016, SOURCE: SCIENTIFIC REPORTS, VOLUME: 6
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | CIÊNCIAVITAE
88
TITLE: Effect of AlN content on the lattice site location of terbium ions in AlxGa1-xN compounds  Full Text
AUTHORS: Fialho, M; Rodrigues, J; Magalhaes, S; Correia, MR; Monteiro, T ; Lorenz, K ; Alves, E ;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ORCID | CIÊNCIAVITAE
89
TITLE: Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films  Full Text
AUTHORS: Flemban, TH; Sequeira, MC; Zhang, Z; Venkatesh, S; Alves, E ; Lorenz, K ; Roqan, IS;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 119, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | CIÊNCIAVITAE
90
TITLE: Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium  Full Text
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef: 10
IN MY: ORCID | CIÊNCIAVITAE
Page 9 of 30. Total results: 298.

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