81
TITLE: Radiation sensors based on GaN microwires  Full Text
AUTHORS: Verheij, D; Peres, M; Cardoso, S ; Alves, LC; Alves, E ; Durand, C; Eymery, J; Lorenz, K ;
PUBLISHED: 2018, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 51, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef: 9
82
TITLE: Spatially resolved optical activation of Eu ions by laser irradiation implanted hexagonal MoO3 microrods  Full Text
AUTHORS: Almodovar, P; Diaz Guerra, C; Ramirez Castellanos, J; Gonzalez Calbet, JM; Peres, M; Lorenz, K ;
PUBLISHED: 2018, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 113, ISSUE: 3
INDEXED IN: WOS
83
TITLE: Spatially resolved optical activation of Eu ions by laser irradiation in implanted hexagonal MoO3 microrods
AUTHORS: Almodóvar, P; Díaz Guerra, C; Ramírez Castellanos, J; González Calbet, JM; Peres, M; Lorenz, K ;
PUBLISHED: 2018, SOURCE: Applied Physics Letters, VOLUME: 113, ISSUE: 3
INDEXED IN: Scopus CrossRef: 4
84
TITLE: Strain detection in crystalline heterostructures using bidimensional blocking patterns of channelled particles
AUTHORS: Redondo Cubero, A; David Bosne, E; Wahl, U; Miranda, P; da Silva, MR; Correia, JG ; Lorenz, K ;
PUBLISHED: 2018, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 51, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef: 3
85
TITLE: Doping β-Ga<sub>2</sub>O<sub>3</sub> with europium: influence of the implantation and annealing temperature  Full Text
AUTHORS: Peres, M; Lorenz, K ; Alves, E ; Nogales, E; Méndez, B; Biquard, X; Daudin, B; Víllora, EG; Shimamura, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 32
INDEXED IN: Scopus WOS CrossRef: 27
86
TITLE: Effect of buried extended defects on the radiation tolerance of ZnO
AUTHORS: Azarov, A; Wendler, E; Lorenz, K ; Monakhov, E; Svensson, BG;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 110, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef: 8
87
TITLE: Effects of thermal annealing on the structural and electronic properties of rare earth-implanted MoO3 nanoplates  Full Text
AUTHORS: Vila, M; Diaz Guerra, C; Lorenz, K ; Piqueras, J; Pis, I; Magnano, E; Munuera, C; Alves, E ; Garcia Hernandez, M;
PUBLISHED: 2017, SOURCE: CRYSTENGCOMM, VOLUME: 19, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef: 6
88
TITLE: Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Lorenz, K ; Kappers, MJ; Bockowski, M;
PUBLISHED: 2017, SOURCE: SCIENTIFIC REPORTS, VOLUME: 7, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 11
89
TITLE: Implantation damage formation in a-, c- and m-plane GaN  Full Text
AUTHORS: Lorenz, K ; Wendler, E; Redondo Cubero, A; Catarino, N; Chauvat, MP; Schwaiger, S; Scholz, F; Alves, E ; Ruterana, P;
PUBLISHED: 2017, SOURCE: ACTA MATERIALIA, VOLUME: 123
INDEXED IN: Scopus WOS CrossRef: 72
90
TITLE: Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect
AUTHORS: Schöche, S; Hofmann, T; Nilsson, D; Kakanakova Georgieva, A; Janzén, E; Kühne, P; Lorenz, K ; Schubert, M; Darakchieva, V;
PUBLISHED: 2017, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 121, ISSUE: 20
INDEXED IN: Scopus WOS CrossRef: 15
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