Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 129



121
TITLE: Defect recovery in AIN and InN after heavy ion implantation  Full Text
AUTHORS: Lorenz, K ; Vianden, R;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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122
TITLE: Reversible changes in the lattice site structure for In implanted into GaN  Full Text
AUTHORS: Lorenz, K ; Ruske, F; Vianden, R;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef
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123
TITLE: Annealing behaviour of GaN after implantation with hafnium and indium  Full Text
AUTHORS: Lorenz, K ; Ruske, F; Vianden, R;
PUBLISHED: 2001, SOURCE: Physica Status Solidi (B) Basic Research, VOLUME: 228, ISSUE: 1
INDEXED IN: Scopus CrossRef
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124
TITLE: Dopants in semiconductors studied by perturbed angular correlation
AUTHORS: Bartels, J; Lorenz, K ; Ruske, F; Tessema, G; Vianden, R;
PUBLISHED: 2001, SOURCE: 36th Zakopane-School-of-Physics International Symposium on Condensed Matter Studies with Nuclear Methods in ACTA PHYSICA POLONICA A, VOLUME: 100, ISSUE: 5
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125
TITLE: Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films
AUTHORS: Wruck, D; Lorenz, K ; Vianden, R; Reinhold, B; Mahnke, HE; Baranowski, JM; Pakula, K; Parthier, L; Henneberger, F;
PUBLISHED: 2001, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 16, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
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126
TITLE: Optical doping of nitrides by ion implantation  Full Text
AUTHORS: Alves, E ; Lorenz, K ; Vianden, R; Boemare, C; Soares, MJ ; Monteiro, T ;
PUBLISHED: 2001, SOURCE: Workshop on Advanced Materials Produced and Analyzed with Ion Beams in MODERN PHYSICS LETTERS B, VOLUME: 15, ISSUE: 28-29
INDEXED IN: Scopus WOS
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127
TITLE: Photoluminescence and lattice location of Eu and Pr implanted GaN samples  Full Text
AUTHORS: Monteiro, T ; Boemare, C; Soares, MJ ; Ferreira, RAS ; Carlos, LD ; Lorenz, K ; Vianden, R; Alves, E ;
PUBLISHED: 2001, SOURCE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
INDEXED IN: Scopus WOS CrossRef: 78
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128
TITLE: Defect trapping and annealing for transition metal implants in group III nitrides
AUTHORS: Lorenz, K ; Vianden, R; Pearton, SJ; Abernathy, CR; Zavada, JM;
PUBLISHED: 2000, SOURCE: MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, VOLUME: 5, ISSUE: 5
INDEXED IN: Scopus WOS CrossRef
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129
TITLE: RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates  Full Text
AUTHORS: Lorenz, K ; Vianden, R; Birkhahn, R; Steckl, AJ; da Silva, MF; Soares, JC; Alves, E ;
PUBLISHED: 2000, SOURCE: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 161
INDEXED IN: Scopus WOS CrossRef
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Page 13 of 13. Total results: 129.

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