Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 129



71
TITLE: A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 degrees C  Full Text
AUTHORS: Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 146, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
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72
TITLE: Defect studies on fast and thermal neutron irradiated GaN  Full Text
AUTHORS: Lorenz, K ; Marques, JG ; Franco, N; Alves, E ; Peres, M; Correia, MR ; Monteiro, T ;
PUBLISHED: 2008, SOURCE: 14th International Conference on Radiation Effects in Insulators (REI-14) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 266, ISSUE: 12-13
INDEXED IN: Scopus WOS CrossRef: 10
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73
TITLE: Luminescence spectroscopy of Eu-implanted zincblende GaN  Full Text
AUTHORS: Roqan, IS; O'Donnell, KP; Trager Cowan, C; Hourahine, B; Martin, RW; Lorenz, K ; Alves, E ; As, DJ; Panfilova, M; Watson, IM;
PUBLISHED: 2008, SOURCE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 245, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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74
TITLE: Mechanisms of AlInN growth by MOVPE: modeling and experimental study  Full Text
AUTHORS: Yakovlev, EV; Lobanova, AV; Talalaev, RA; Watson, IM; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: 7th International Conference on Nitride Semiconductors (ICNS-7) in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, VOLUME: 5, ISSUE: 6
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75
TITLE: Optical energies of AlInN epilayers  Full Text
AUTHORS: Wang, K; Martin, RW; Amabile, D; Edwards, PR; Hernandez, S; Nogales, E; O'Donnell, KP; Lorenz, K ; Alves, E ; Matias, V; Vantomme, A; Wolverson, D; Watson, IM;
PUBLISHED: 2008, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 103, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef
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76
TITLE: Rare earth doping of III-nitride alloys by ion implantation  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Roqan, IS; Martin, RW; Trager Cowan, C; O'Donnell, KP; Watson, IM;
PUBLISHED: 2008, SOURCE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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77
TITLE: Relaxation of compressively strained AlInN on GaN  Full Text
AUTHORS: Lorenz, K ; Franco, N; Alves, E ; Pereira, S ; Watson, IM; Martin, RW; O'Donnell, KP;
PUBLISHED: 2008, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 310, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef
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78
TITLE: Temperature dependent site change of In in AIN and GaN  Full Text
AUTHORS: Schmitz, J; Penner, J; Lorenz, K ; Vianden, R;
PUBLISHED: 2008, SOURCE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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79
TITLE: Two colour experiments in Eu3+ implanted GaN  Full Text
AUTHORS: Bodiou, L; Braud, A; Doualan, JL; Moncorge, R; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: 6th International Conference on f-Elements (ICFE-6) in JOURNAL OF ALLOYS AND COMPOUNDS, VOLUME: 451, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef
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80
TITLE: Visible and infrared luminescence study of Er doped beta-Ga2O3 and Er3Ga5O12  Full Text
AUTHORS: Nogales, E; Garcia, JA; Mendez, B; Piqueras, J; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 41, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
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Page 8 of 13. Total results: 129.

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