Manfred Niehus
AuthID: R-000-9ZP
11
TITLE: New results on diffusion lengths measurements in wide bandgap semiconductors, obtained from steady state photocarrier gratings (SSPG) Full Text
AUTHORS: Niehus, M; Schwarz, R ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
AUTHORS: Niehus, M; Schwarz, R ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
12
TITLE: Thermalization and recombination in exponential band tail states Full Text
AUTHORS: Niehus, M; Schwarz, R ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, ISSUE: 6
AUTHORS: Niehus, M; Schwarz, R ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, ISSUE: 6
13
TITLE: Diffusion lengths in GaN obtained from steady state photocarrier gratings (SSPG) Full Text
AUTHORS: Niehus, M; Schwarz, R ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, ISSUE: 6
AUTHORS: Niehus, M; Schwarz, R ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, ISSUE: 6
14
TITLE: Structural and composition analysis of GaN films deposited by cyclic-PLD at different substrate temperatures Full Text
AUTHORS: Sanguino, P; Teodoro, OMND ; Niehus, M; Marques, CP; Moutinho, AMC ; Alves, E ; Schwarz, R ;
PUBLISHED: 2005, SOURCE: SENSORS AND ACTUATORS A-PHYSICAL, VOLUME: 121, ISSUE: 1
AUTHORS: Sanguino, P; Teodoro, OMND ; Niehus, M; Marques, CP; Moutinho, AMC ; Alves, E ; Schwarz, R ;
PUBLISHED: 2005, SOURCE: SENSORS AND ACTUATORS A-PHYSICAL, VOLUME: 121, ISSUE: 1
15
TITLE: Fine-tuning of the spectral collection efficiency in a multilayer junction through the LSP technique
AUTHORS: Fernandes, M ; Fantoni, A ; Niehus, M; Louro, P ; Lavareda, G ; Carvalho, CN ; Vieira, M;
PUBLISHED: 2005, SOURCE: Symposium on Micro- and Nanosystems held at the 2005 MRS Spring Meeting in Micro- and Nanosystems-Materials and Devices, VOLUME: 872
AUTHORS: Fernandes, M ; Fantoni, A ; Niehus, M; Louro, P ; Lavareda, G ; Carvalho, CN ; Vieira, M;
PUBLISHED: 2005, SOURCE: Symposium on Micro- and Nanosystems held at the 2005 MRS Spring Meeting in Micro- and Nanosystems-Materials and Devices, VOLUME: 872
INDEXED IN: 
Scopus 
WOS
Scopus WOS16
TITLE: Lifetime regime in the electrically-detected transient grating method applied to amorphous and microcrystalline silicon films
AUTHORS: Sanguino, P; Niehus, M; Koynov, S; Brogueira, P ; Schwarz, R ; Conde, JP ; Chu, V ; Schiff, EA;
PUBLISHED: 2002, SOURCE: Symposium on Amorphous and Heterogeneous Silicon-Based Films held at the 2002 MRS Spring Meeting in AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, VOLUME: 715
AUTHORS: Sanguino, P; Niehus, M; Koynov, S; Brogueira, P ; Schwarz, R ; Conde, JP ; Chu, V ; Schiff, EA;
PUBLISHED: 2002, SOURCE: Symposium on Amorphous and Heterogeneous Silicon-Based Films held at the 2002 MRS Spring Meeting in AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, VOLUME: 715
INDEXED IN: Scopus WOS
Scopus WOS17
TITLE: Layer by layer growth of GaN films by low temperature cyclic process
AUTHORS: Sanguino, P; Koynov, S; Niehusl, M; Melo, LV ; Schwarz, R ; Alves, H; Meyer, BK;
PUBLISHED: 2002, SOURCE: Symposium on GaN and Related Alloys-2001 held at the 2001 MRS Fall Meeting in GAN AND RELATED ALLOYS-2001, VOLUME: 693
AUTHORS: Sanguino, P; Koynov, S; Niehusl, M; Melo, LV ; Schwarz, R ; Alves, H; Meyer, BK;
PUBLISHED: 2002, SOURCE: Symposium on GaN and Related Alloys-2001 held at the 2001 MRS Fall Meeting in GAN AND RELATED ALLOYS-2001, VOLUME: 693
INDEXED IN: Scopus WOS
Scopus WOS18
TITLE: Low temperature photoluminescence, transient photoconductivity and microwave reflection for optical properties and transport in PLD-GaN Full Text
AUTHORS: Niehus, M; Sanguino, P; Schwarz, R ; Monteiro, T ; Soares, MJ ; Pereira, E; Kunst, M; Koynov, S;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
AUTHORS: Niehus, M; Sanguino, P; Schwarz, R ; Monteiro, T ; Soares, MJ ; Pereira, E; Kunst, M; Koynov, S;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
19
TITLE: Layer-by-layer growth of GaN on sapphire by low temperature cyclic pulsed laser deposition nitrogen RF plasma
AUTHORS: Sanguino, P; Niehus, M; Koynov, S; Schwarz, R ; Alves, H; Meyer, B;
PUBLISHED: 2002, SOURCE: Symposia on Materials and Devices for Optoelectronics and Photonics/Photonic Crystals - From Materials to Devices held at the 2002 MRS Spring Meeting in MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, VOLUME: 722
AUTHORS: Sanguino, P; Niehus, M; Koynov, S; Schwarz, R ; Alves, H; Meyer, B;
PUBLISHED: 2002, SOURCE: Symposia on Materials and Devices for Optoelectronics and Photonics/Photonic Crystals - From Materials to Devices held at the 2002 MRS Spring Meeting in MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, VOLUME: 722
INDEXED IN: Scopus WOS
Scopus WOS20
TITLE: Photoconductivity studies of Al0.18Ga0.82N/GaN single heterostructure Full Text
AUTHORS: Niehus, M; Schwarz, R ; Koynov, S; Sanguino, P; Heuken, M; Meyer, BK;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 188, ISSUE: 2
AUTHORS: Niehus, M; Schwarz, R ; Koynov, S; Sanguino, P; Heuken, M; Meyer, BK;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 188, ISSUE: 2
