Maria Celeste da Silva do Carmo
AuthID: R-000-AQ5
51
TITLE: Carrier dynamics in particle-irradiated InGaAs/GaAs quantum dots Full Text
AUTHORS: Cavaco, A; Sobolev, NA; Carmo, MC; Guffarth, F; Born, H; Heitz, R; Hoffmann, A; Bimberg, D;
PUBLISHED: 2003, SOURCE: 2nd International Conference on Semiconductor Quantum Dots in 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, ISSUE: 4
AUTHORS: Cavaco, A; Sobolev, NA; Carmo, MC; Guffarth, F; Born, H; Heitz, R; Hoffmann, A; Bimberg, D;
PUBLISHED: 2003, SOURCE: 2nd International Conference on Semiconductor Quantum Dots in 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, ISSUE: 4
52
TITLE: Influence of defects on the luminescence of Ge/Si quantum dots Full Text
AUTHORS: Sobolev, NA; Fonseca, A; Leitao, JP ; Carmo, MC; Presting, H; Kibbel, H;
PUBLISHED: 2003, SOURCE: 2nd International Conference on Semiconductor Quantum Dots in 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, ISSUE: 4
AUTHORS: Sobolev, NA; Fonseca, A; Leitao, JP ; Carmo, MC; Presting, H; Kibbel, H;
PUBLISHED: 2003, SOURCE: 2nd International Conference on Semiconductor Quantum Dots in 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, ISSUE: 4
53
TITLE: Uniaxial stress study of the 1026-meV center in Si : Pt
AUTHORS: Leitao, JP; Carmo, MC; Henry, MO; McGlynn, E;
PUBLISHED: 2001, SOURCE: PHYSICAL REVIEW B, VOLUME: 63, ISSUE: 23
AUTHORS: Leitao, JP; Carmo, MC; Henry, MO; McGlynn, E;
PUBLISHED: 2001, SOURCE: PHYSICAL REVIEW B, VOLUME: 63, ISSUE: 23
INDEXED IN: 
WOS
WOS54
TITLE: Evaluation of the infrared absorption in nm-thick heavily boron-doped Si1-xGex layers on silicon Full Text
AUTHORS: Cavaco, A; Sobolev, NA; Carmo, MC; Presting, H; Konig, U;
PUBLISHED: 2001, SOURCE: 3rd International Conference on Materials in Microelectronics in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 12, ISSUE: 4-6
AUTHORS: Cavaco, A; Sobolev, NA; Carmo, MC; Presting, H; Konig, U;
PUBLISHED: 2001, SOURCE: 3rd International Conference on Materials in Microelectronics in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 12, ISSUE: 4-6
55
TITLE: Coherent amorphization of Ge/Si multilayers with ion beams Full Text
AUTHORS: Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ; Sobolev, NA; Carmo, MC;
PUBLISHED: 2001, SOURCE: E-MRS Spring Meeting on Materials Science with Ion Beams in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 178, ISSUE: 1-4
AUTHORS: Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ; Sobolev, NA; Carmo, MC;
PUBLISHED: 2001, SOURCE: E-MRS Spring Meeting on Materials Science with Ion Beams in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 178, ISSUE: 1-4
56
TITLE: Enhanced radiation hardness of InAs/GaAs quantum dot structures Full Text
AUTHORS: Sobolev, NA; Cavaco, A; Carmo, MC; Grundmann, M; Heinrichsdorff, F; Bimberg, D;
PUBLISHED: 2001, SOURCE: International Conference on Semiconductor Quantum Dots (QD2000) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 224, ISSUE: 1
AUTHORS: Sobolev, NA; Cavaco, A; Carmo, MC; Grundmann, M; Heinrichsdorff, F; Bimberg, D;
PUBLISHED: 2001, SOURCE: International Conference on Semiconductor Quantum Dots (QD2000) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 224, ISSUE: 1
57
TITLE: Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation
AUTHORS: Ribbat, C; Sellin, R; Grundmann, M; Bimberg, D; Sobolev, NA; Carmo, MC;
PUBLISHED: 2001, SOURCE: ELECTRONICS LETTERS, VOLUME: 37, ISSUE: 3
AUTHORS: Ribbat, C; Sellin, R; Grundmann, M; Bimberg, D; Sobolev, NA; Carmo, MC;
PUBLISHED: 2001, SOURCE: ELECTRONICS LETTERS, VOLUME: 37, ISSUE: 3
58
TITLE: AC conductivity of porous silicon from Monte Carlo simulations Full Text
AUTHORS: Ventura, PJ; Costa, LC ; Carmo, MC; Roman, HE; Pavesi, L;
PUBLISHED: 2000, SOURCE: 1st International Conference on Porous Semiconductors - Science and Technology (PSST 98) in JOURNAL OF POROUS MATERIALS, VOLUME: 7, ISSUE: 1-3
AUTHORS: Ventura, PJ; Costa, LC ; Carmo, MC; Roman, HE; Pavesi, L;
PUBLISHED: 2000, SOURCE: 1st International Conference on Porous Semiconductors - Science and Technology (PSST 98) in JOURNAL OF POROUS MATERIALS, VOLUME: 7, ISSUE: 1-3
59
TITLE: Light emitting porous silicon diode based on a silicon/porous silicon heterojunction Full Text
AUTHORS: Pavesi, L; Chierchia, R; Bellutti, P; Lui, A; Fuso, F; Labardi, M; Pardi, L; Sbrana, F; Allegrini, M; Trusso, S; Vasi, C; Ventura, PJ; Costa, LC ; Carmo, MC; Bisi, O;
PUBLISHED: 1999, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 86, ISSUE: 11
AUTHORS: Pavesi, L; Chierchia, R; Bellutti, P; Lui, A; Fuso, F; Labardi, M; Pardi, L; Sbrana, F; Allegrini, M; Trusso, S; Vasi, C; Ventura, PJ; Costa, LC ; Carmo, MC; Bisi, O;
PUBLISHED: 1999, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 86, ISSUE: 11
60
TITLE: Porous silicon capping by CVD diamond Full Text
AUTHORS: Fernandes, AJ; Ventura, PJ; Silva, RF ; Carmo, MC;
PUBLISHED: 1999, SOURCE: 2nd European Conference on Hard Coatings (ETCHC-2)/3rd Iberian Vacuum Meeting (3rd RIVA) in VACUUM, VOLUME: 52, ISSUE: 1-2
AUTHORS: Fernandes, AJ; Ventura, PJ; Silva, RF ; Carmo, MC;
PUBLISHED: 1999, SOURCE: 2nd European Conference on Hard Coatings (ETCHC-2)/3rd Iberian Vacuum Meeting (3rd RIVA) in VACUUM, VOLUME: 52, ISSUE: 1-2
