201
TITLE: EPR STUDIES OF POINT DEFECT AND AMORPHOUS PHASE PRODUCTION DURING ION IMPLANTATION IN SILICON.
AUTHORS: Sobolev N.A.; Goetz G.; Karthe W.; Schnabel B.;
PUBLISHED: 1979, SOURCE: Radiation effects, VOLUME: 42, ISSUE: 1-2
INDEXED IN: Scopus
IN MY: ORCID
202
TITLE: ESR line share study of amorphous centres in ion implanted silicon
AUTHORS: Götz, G; Karthe, W; Schnabel, B; Sobolev, N;
PUBLISHED: 1978, SOURCE: Physica Status Solidi (a), VOLUME: 50, ISSUE: 2
INDEXED IN: CrossRef: 7
IN MY: ORCID
Page 21 of 21. Total results: 202.